參數(shù)資料
型號： ATF-55143-TR2
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁數(shù)： 16/21頁
文件大?。?/td> 254K
代理商： ATF-55143-TR2
4
ATF-55143 Typical Performance Curves
Figure 6. Gain vs. Bias over Frequency.[1]
FREQUENCY (GHz)
GAIN
(dB)
0
6
2
1
4
5
3
30
25
20
15
10
5
2V, 10 mA
2.7V, 10 mA
Figure 8. OIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
OIP3
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
27
25
23
21
19
17
15
Figure 9. IIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
IIP3
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
15
10
5
0
-5
Figure 10. P1dB vs. Bias over Frequency.[1,2]
FREQUENCY (GHz)
P1dB
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
16
14
12
10
8
Figure 11. Gain vs. Ids and Vds at 2 GHz.[1]
2V
2.7V
3V
Ids (mA)
GAIN
(dB)
0
35
10
5
20
25
30
15
21
20
19
18
17
16
15
Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1]
Ids (mA)
OIP3
(dBm)
0
35
33
31
29
27
25
23
21
19
2V
2.7V
3V
10
5
20
25
30
15
Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1]
Ids (mA)
IIP3
(dBm)
0
35
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
10
5
20
25
30
15
Figure 7. Fmin vs. Frequency and Bias.
FREQUENCY (GHz)
Fmin
(dB)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 12. Fmin vs. Ids and Vds at 2 GHz.
Ids (mA)
Fmin
(dB)
0
35
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
2V
2.7V
3V
10
5
20
25
30
15
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a tradeoff between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been deembedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
dsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
DS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
相關PDF資料
PDF描述
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關代理商/技術參數(shù)
參數(shù)描述
ATF-55143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-551M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor
ATF-551M4-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*