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參數(shù)資料
| 型號： | ATF-55143-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 254K |
| 代理商： | ATF-55143-TR2 |
2
ATF-55143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
DrainSource Voltage[2]
V
5
V
GS
GateSource Voltage[2]
V
5 to 1
V
GD
Gate Drain Voltage[2]
V
5 to 1
I
DS
Drain Current[2]
mA
100
I
GS
Gate Current[5]
mA
1
P
diss
Total Power Dissipation[3]
mW
270
P
in max.
RF Input Power[5]
(Vd=2.7V, Id=10A)
dBm
20
(Vd=0V, Id=0A)
dBm
20
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
65 to 150
θ
jc
Thermal Resistance[4]
°C/W
235
ESD (Human Body Model)
V
200
ESD (Machine Model)
V
25
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.3 mW/°C for T
L > 87°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure
ment method.
5. Device can safely handle +10 dBm RF Input Power as long as I
GS is
limited to 1 mA. I
GS at P1dB drive level is bias circuit dependent. See
applications section for additional information.
Product Consistency Distribution Charts[6,7]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS= 0.1 V per step)
I DS
(mA)
0.4V
0.3V
0.5V
0.6V
0.7V
0
2
1
4
6
5
3
7
70
60
50
40
30
20
10
0
OIP3 (dBm)
Figure 2. OIP3 @ 2.7 V, 10 mA.
LSL = 22.0, Nominal = 24.2
22
23
25
24
26
300
250
200
150
100
50
0
Cpk = 2.02
Stdev = 0.36
-3 Std
GAIN (dB)
Figure 3. Gain @ 2.7 V, 10 mA.
USL = 18.5, LSL = 15.5, Nominal = 17.7
15
17
16
18
19
200
160
120
80
40
0
Cpk = 1.023
Stdev = 0.28
-3 Std
+3 Std
NF (dB)
Figure 4. NF @ 2.7 V, 10 mA.
USL = 0.9, Nominal = 0.6
0.43
0.63
0.53
0.83
0.73
0.93
240
200
160
120
80
40
0
Cpk = 3.64
Stdev = 0.031
+3 Std
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a tradeoff between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been deembedded from actual measurements.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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