參數(shù)資料
型號: ATF-55143-TR2
元件分類: 小信號晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: PLASTIC, SC-70, 4 PIN
文件頁數(shù): 11/21頁
文件大?。?/td> 254K
代理商: ATF-55143-TR2
19
Ordering Information
Part Number
No. of Devices
Container
ATF55143TR1
3000
7" Reel
ATF55143TR2
10000
13" Reel
ATF55143BLK
100
antistatic bag
ATF55143TR1G
3000
7” Reel
ATF55143TR2G
10000
13”Reel
ATF55143BLKG
100
antistatic bag
Dimensions
Symbol
Min (mm)
Max (mm)
E
1.15
1.35
D
1.85
2.25
HE
1.80
2.40
A
0.80
1.10
A2
0.80
1.00
A1
0.00
0.10
b
0.25
0.40
b1
0.55
0.70
c
0.10
0.20
L
0.10
0.46
Note:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash and metal burr.
4. All specifications comply with EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form, i.e., reverse trim/form.
6. Package surface to be mirror finish.
Package Dimensions Outline 43 (SOT-343/SC70 lead)
相關PDF資料
PDF描述
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關代理商/技術參數(shù)
參數(shù)描述
ATF-55143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-551M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor
ATF-551M4-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: