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| 型號(hào)： | ATF-55143-TR1 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 4/21頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | ATF-55143-TR1 |
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12
ATF-55143 Typical Scattering Parameters, V
DS = 3V, IDS = 20 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.998
7.4
23.34
14.697
174.2
0.005
85.1
0.763
4.3
34.68
0.5
0.947
35.9
22.77
13.762
151.9
0.023
69.2
0.721
20.6
27.77
0.9
0.859
60.9
21.71
12.178
132.9
0.037
56.2
0.661
33.8
25.17
1.0
0.839
66.7
21.41
11.764
128.7
0.039
53.5
0.642
36.3
24.79
1.5
0.738
91.8
19.86
9.844
110.5
0.050
42.5
0.570
46.7
22.94
1.9
0.671
108.7
18.71
8.621
98.5
0.055
36.2
0.524
52.5
21.95
2.0
0.657
112.7
18.44
8.354
95.7
0.057
34.8
0.514
53.7
21.66
2.5
0.595
131.7
17.19
7.233
82.7
0.062
28.7
0.468
59.1
20.67
3.0
0.552
149.8
16.07
6.36
70.9
0.067
23.5
0.423
63.8
19.77
4.0
0.513
175.4
14.2
5.13
49.1
0.075
14.2
0.345
74.3
18.35
5.0
0.521
143.8
12.58
4.256
28.7
0.081
4.9
0.287
87.7
16.82
6.0
0.536
118.3
11.1
3.588
9.7
0.087
3.5
0.254
101.6
14.32
7.0
0.557
96.5
9.83
3.1
8.2
0.092
12.9
0.224
116.1
12.80
8.0
0.577
75.3
8.67
2.715
25.8
0.095
22.1
0.187
124.3
11.44
9.0
0.613
56.2
7.71
2.43
43.1
0.105
28.7
0.140
133.5
10.68
10.0
0.687
38
6.81
2.192
61.8
0.116
41.7
0.075
178.8
10.67
11.0
0.746
22
5.67
1.922
80.2
0.121
54
0.084
94
10.24
12.0
0.787
8.1
4.59
1.697
97.2
0.126
66.1
0.145
54.4
9.82
13.0
0.816
7
3.62
1.516
114.9
0.128
79.1
0.191
30
9.35
14.0
0.842
22.6
2.67
1.36
133.6
0.131
93
0.256
8
9.01
15.0
0.869
37
1.3
1.161
152.3
0.126
107.2
0.369
10.9
8.04
16.0
0.863
50.2
0.29
0.967
169.6
0.1200
120.2
0.471
23.5
6.10
17.0
0.879
59.6
1.7
0.822
175.6
0.118
131.9
0.548
37.3
5.47
18.0
0.924
69.8
2.87
0.719
159.7
0.113
145.9
0.608
52.2
7.40
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.63
17.6
0.1
25.89
0.9
0.24
0.54
23.4
0.1
23.98
1.0
0.25
0.53
27.9
0.1
23.53
1.9
0.39
0.48
48.4
0.09
20
2.0
0.4
0.47
51.6
0.09
19.66
2.4
0.47
0.39
61.9
0.08
18.4
3.0
0.56
0.32
78.7
0.07
16.77
3.9
0.68
0.19
119.8
0.06
14.85
5.0
0.85
0.19
170.4
0.06
13.21
5.8
0.97
0.22
135.1
0.08
12.37
6.0
1.01
0.22
128.4
0.09
12.2
7.0
1.14
0.28
94.7
0.14
11.47
8.0
1.31
0.35
66.8
0.25
10.84
9.0
1.47
0.44
45.6
0.38
10.15
10.0
1.59
0.54
28.9
0.57
9.22
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 3V, IDS = 20 mA
Figure 31. MSG/MAG and |S21|2 vs.
Frequency at 3V, 20 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
40
35
30
25
20
15
10
5
0
-5
MAG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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