參數(shù)資料
型號: ATF-55143-TR1
元件分類: 小信號晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: PLASTIC, SC-70, 4 PIN
文件頁數(shù): 19/21頁
文件大小: 254K
代理商: ATF-55143-TR1
7
ATF-55143 Typical Scattering Parameters, V
DS = 2 V, IDS = 10 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.998
6.5
20.78
10.941
174.9
0.006
86.1
0.796
4.2
32.61
0.5
0.963
31.7
20.37
10.434
154.8
0.029
70.2
0.762
20.4
25.56
0.9
0.894
54.7
19.57
9.516
137.1
0.048
56.9
0.711
34.4
22.97
1.0
0.879
60.1
19.32
9.252
133.0
0.051
54
0.693
37.3
22.59
1.5
0.793
84.1
18.07
8.009
115.2
0.066
41.5
0.622
49.6
20.84
1.9
0.731
100.8
17.11
7.166
102.8
0.075
33.6
0.570
57.1
19.80
2.0
0.718
104.7
16.86
6.970
100.1
0.077
31.8
0.559
58.7
19.57
2.5
0.657
123.7
15.79
6.159
86.6
0.084
23.7
0.503
66.3
18.65
3.0
0.611
141.8
14.80
5.494
74.2
0.090
16.5
0.446
73
17.86
4.0
0.561
177.5
13.10
4.517
51.0
0.098
3.6
0.343
87.6
16.64
5.0
0.558
149.4
11.52
3.768
29.3
0.102
8.3
0.269
104.4
15.68
6.0
0.566
122.5
10.06
3.183
9.4
0.104
18.4
0.224
120.4
14.08
7.0
0.583
99.7
8.78
2.748
9.2
0.106
28.5
0.189
137.3
11.96
8.0
0.601
77.7
7.62
2.404
27.4
0.105
38.4
0.140
149.3
10.40
9.0
0.636
57.5
6.63
2.147
45.3
0.110
44.7
0.084
170
9.51
10.0
0.708
38.3
5.66
1.919
64.6
0.117
56.6
0.08
109.3
9.34
11.0
0.76
21.8
4.45
1.670
83.1
0.119
68.2
0.151
64.5
8.77
12.0
0.794
7.6
3.32
1.465
100.2
0.121
79.3
0.217
40.8
8.14
13.0
0.819
7.8
2.29
1.302
117.9
0.121
91.4
0.262
20.8
7.55
14.0
0.839
23.6
1.27
1.157
136.7
0.122
104.4
0.327
0.5
6.92
15.0
0.862
37.9
0.19
0.978
155.2
0.115
117.7
0.431
16.4
6.14
16.0
0.853
51.0
1.83
0.810
171.8
0.109
129.4
0.522
28.6
4.53
17.0
0.868
60.1
3.25
0.688
173.9
0.107
139.9
0.588
41.6
3.91
18.0
0.911
70.3
4.44
0.601
158.5
0.102
153.2
0.641
55.8
4.79
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.21
0.65
17.5
0.13
24.84
0.9
0.26
0.60
22.6
0.12
22.86
1.0
0.27
0.55
27.0
0.12
22.39
1.9
0.42
0.55
49.4
0.11
18.77
2.0
0.43
0.54
51.7
0.11
18.42
2.4
0.50
0.45
61.5
0.10
17.14
3.0
0.59
0.40
78.1
0.09
15.50
3.9
0.73
0.26
111.9
0.07
13.62
5.0
0.92
0.21
172.5
0.06
12.05
5.8
1.04
0.24
151.5
0.07
11.28
6.0
1.06
0.23
144.5
0.08
11.12
7.0
1.22
0.28
107.1
0.14
10.45
8.0
1.42
0.33
75.5
0.24
9.84
9.0
1.57
0.43
51.5
0.38
9.10
10.0
1.71
0.54
33.3
0.57
8.03
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F
min is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 2V, IDS = 10 mA
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 2V, 10 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
35
30
25
20
15
10
5
0
-5
-10
MAG
相關PDF資料
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ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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