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參數(shù)資料
| 型號(hào)： | ATF-54143-TR2G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 6/17頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | ATF-54143-TR2G |
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14
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure
ments while the Fmins below 2 GHz have been extrapo
lated. The Fmin values are based on a set of 16 noise
figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measure
ments, a true Fmin is calculated. Fmin represents the true
minimum noise figure of the device when the device is
presented with an impedance matching network that
transforms the source impedance, typically 50, to an
impedance represented by the reflection coefficient Go.
The designer must design a matching network that will
present Go to the device with minimal associated circuit
losses. The noise figure of the completed amplifier is
equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when
the device is presented with Go. If the reflection coef
ficient of the matching network is other than Go, then
the noise figure of the device will be greater than Fmin
based on the following equation.
NF = Fmin + 4 Rn
|
Γs – Γo |2
Zo (|1 +
Γo|2)(1 |Γs|2)
Where Rn/Zo is the normalized noise resistance, Go is
the optimum reflection coefficient required to produce
Fmin and Gs is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are nonzero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. Go is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower Go as compared to narrower gate width devices.
Typically for FETs, the higher Go usually infers that an
impedance much higher than 50 is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching
to such a high impedance requires very hiQ compo
nents in order to minimize circuit losses. As an example
at 900 MHz, when airwwound coils (Q>100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30
to 50 range results in additional loss over the airwound
coil. Losses as high as 0.5 dB or greater add to the
typical 0.15 dB Fmin of the device creating an amplifier
noise figure of nearly 0.65 dB. A discussion concerning
calculated and measured circuit losses and their effect
on amplifier noise figure is covered in Avago Technolo
gies Application 1085.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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