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參數(shù)資料
| 型號(hào)： | ATF-54143-TR2G |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 11/17頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | ATF-54143-TR2G |
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3
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
0.4
0.59
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.38
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
—
1
5
Gm
Transconductance
Vds = 3V, gm = Idss/Vgs; mmho
230
410
560
Vgs = 0.750.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = 3V
A
—
200
NF
Noise Figure[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.5
0.9
f = 900 MHz
Vds = 3V, Ids = 60 mA
dB
—
0.3
—
Ga
Associated Gain[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
15
16.6
18.5
f = 900 MHz
Vds = 3V, Ids = 60 mA
dB
—
23.4
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
33
36.2
—
Intercept Point[1]
f = 900 MHz
Vds = 3V, Ids = 60 mA
dBm
—
35.5
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
—
20.4
—
Output Power[1]
f = 900 MHz
Vds = 3V, Ids = 60 mA
dBm
—
18.4
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-
ments.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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