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參數(shù)資料
| 型號(hào)： | ATF-54143-TR2G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | ATF-54143-TR2G |
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ATF-54143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ATF54143 is a high dynamic range,
low noise, EPHEMT housed in a 4lead SC70 (SOT343)
surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF54143 ideal for cellular/PCS base
stations, MMDS, and other systems in the 450 MHz to 6
GHz frequency range.
Features
High linearity performance
Enhancement Mode Technology [1]
Low noise figure
Excellent uniformity in product specifications
800 micron gate width
Low cost surface mount small plastic package SOT
343 (4 lead SC70)
TapeandReel packaging option available
Leadfree option available.
Specifications
2 GHz; 3V, 60 mA (Typ.)
36.2 dBm output 3rd order intercept
20.4 dBm output power at 1 dB gain compression
0.5 dB noise figure
16.6 dB associated gain
Applications
Low noise amplifier for cellular/PCS base stations
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete EPHEMT for other ultra
low noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package SOT-343
Pin Connections and Package Marking
SOURCE
DRAIN
GATE
SOURCE
4Fx
Note:
Top View. Package marking provides orientation and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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