參數(shù)資料
型號(hào)： ATF-531P8-TR2
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
文件頁(yè)數(shù)： 2/16頁(yè)
文件大?。?/td> 142K
代理商： ATF-531P8-TR2
10
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.15
0.10
130.00
0.016
27.97
0.9
0.20
0.15
135.00
0.019
23.50
1
0.22
0.20
143.00
0.019
23.02
1.5
0.30
148.00
0.022
20.07
2
0.36
0.35
154.10
0.024
17.85
2.4
0.44
0.43
168.70
0.022
16.35
3
0.50
0.47
179.30
0.022
15.29
3.5
0.55
0.58
-170.80
0.019
14.11
3.9
0.63
0.60
-164.80
0.024
14.01
5
0.80
0.67
-150.90
0.050
11.92
5.8
0.90
0.72
-140.80
0.095
11.00
6
0.91
0.72
-139.50
0.100
10.56
7
1.14
0.71
-129.10
0.180
9.80
8
1.24
0.74
-119.90
0.285
9.31
9
1.49
0.74
-109.70
0.460
8.41
10
1.61
0.76
-97.30
0.720
7.73
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 4V, IDS = 75 mA
Figure 30. MSG/MAG & |S21|
2 (dB)
@ 4V, 75 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.930
-51.3
33.70
48.399
152.3
-37.08
0.014
63.6
0.524
-45.7
35.39
0.2
0.889
-88.3
31.65
38.230
132.6
-32.77
0.023
46.8
0.467
-80.7
32.21
0.3
0.876
-111.6
29.58
30.121
120.6
-31.37
0.027
36.1
0.436
-103.2
30.48
0.4
0.867
-127.3
27.71
24.294
112.2
-30.75
0.029
29.5
0.415
-119.1
29.23
0.5
0.862
-137.0
26.18
20.379
106.6
-30.46
0.030
25.9
0.405
-128.4
28.32
0.6
0.858
-144.7
24.81
17.405
101.9
-30.17
0.031
23.1
0.397
-136.8
27.49
0.7
0.857
-151.0
23.62
15.165
98.2
-29.90
0.032
21.1
0.392
-143.2
26.76
0.8
0.856
-156.0
22.54
13.404
95.0
-29.90
0.032
19.9
0.390
-148.2
26.22
0.9
0.854
-160.0
21.59
12.005
92.2
-29.63
0.033
18.3
0.387
-152.3
25.61
1
0.857
-163.5
20.72
10.859
89.8
-29.63
0.033
18.2
0.384
-155.6
25.17
1.5
0.853
-175.7
17.33
7.351
79.8
-29.12
0.035
16.3
0.380
-167.2
23.22
1.9
0.853
177.6
15.33
5.839
73.3
-28.87
0.036
16.5
0.379
-173.2
22.10
2
0.848
176.2
15.09
5.681
72.0
-28.64
0.037
16.7
0.360
-173.8
21.86
2.4
0.846
170.3
13.52
4.742
66.0
-28.18
0.039
17.0
0.363
-179.0
20.85
3
0.848
162.4
11.55
3.780
57.5
-27.74
0.041
17.0
0.369
174.6
19.65
4
0.850
151.6
8.98
2.813
44.3
-26.94
0.045
16.7
0.385
165.7
16.29
5
0.853
141.4
6.93
2.220
31.5
-25.85
0.051
15.4
0.405
157.5
13.90
6
0.861
132.3
5.22
1.824
19.4
-25.04
0.056
12.9
0.426
149.2
12.31
7
0.861
123.8
3.78
1.546
7.5
-24.01
0.063
9.8
0.447
141.3
10.85
8
0.868
115.6
2.50
1.334
-4.3
-23.22
0.069
5.5
0.467
132.8
9.85
9
0.873
107.1
1.51
1.190
-15.9
-22.16
0.078
0.4
0.481
124.1
9.15
10
0.875
95.8
0.50
1.059
-28.8
-21.41
0.085
-6.6
0.501
113.3
8.19
11
0.881
85.6
-0.57
0.937
-41.2
-20.63
0.093
-13.8
0.515
102.9
7.40
12
0.871
74.2
-1.56
0.836
-52.5
-20.00
0.100
-21.4
0.553
94.5
6.12
13
0.873
63.7
-2.65
0.737
-63.9
-19.66
0.104
-28.8
0.604
83.4
5.28
14
0.885
57.0
-3.80
0.646
-74.0
-19.17
0.110
-36.3
0.644
72.5
4.89
15
0.891
47.0
-4.72
0.581
-85.2
-18.79
0.115
-43.7
0.666
63.7
4.38
16
0.912
43.7
-5.76
0.515
-93.5
-18.56
0.118
-51.7
0.700
54.2
5.43
17
0.895
32.2
-7.15
0.439
-102.3
-18.49
0.119
-58.5
0.748
46.0
2.90
18
0.933
21.2
-8.66
0.369
-110.5
-19.02
0.112
-65.8
0.718
37.8
2.74
相關(guān)PDF資料
PDF描述
ATF-531P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
ATF-54143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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