參數(shù)資料
型號(hào)： ATF-531P8-TR2
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
文件頁(yè)數(shù)： 15/16頁(yè)
文件大?。?/td> 142K
代理商： ATF-531P8-TR2
8
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.50
0.20
166.00
0.041
28.26
0.9
0.59
0.25
169.00
0.044
24.27
1
0.60
0.35
171.00
0.036
24.15
1.5
0.72
0.40
173.00
0.039
21.14
2
0.81
0.57
-173.50
0.029
20.07
2.4
0.90
0.61
-167.70
0.033
18.73
3
1.01
0.63
-163.50
0.041
16.91
3.5
1.10
0.67
-158.20
0.054
15.86
3.9
1.13
0.70
-153.90
0.068
15.12
5
1.34
0.72
-142.70
0.139
13.08
5.8
1.48
0.75
-135.40
0.229
12.04
6
1.58
0.76
-133.30
0.278
11.82
7
1.68
0.80
-125.00
0.470
10.69
8
1.89
0.84
-116.10
0.860
9.97
9
2.15
0.82
-106.90
1.170
8.96
10
2.34
0.85
-95.10
2.010
8.09
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters at 25
°C, VDS = 4V, IDS = 180 mA
Figure 28. MSG/MAG & |S21|
2 (dB)
@ 4V, 180 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
S21
MAG
MSG
MSG/MAG
&
|S21|
2
(dB)
ATF-531P8 Typical Scattering Parameters at 25
°C, V
DS = 4V, IDS = 180 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.626
-59.4
33.20
45.702
154.5
-40.00
0.010
62.6
0.410
-44.4
36.60
0.2
0.704
-97.4
31.41
37.192
135.8
-35.92
0.016
48.8
0.384
-79.2
33.66
0.3
0.761
-119.4
29.53
29.950
123.5
-34.42
0.019
39.1
0.370
-101.8
31.98
0.4
0.794
-133.8
27.78
24.477
114.8
-33.56
0.021
33.7
0.360
-117.6
30.67
0.5
0.815
-142.5
26.32
20.693
108.9
-32.77
0.023
30.0
0.355
-127.1
29.54
0.6
0.824
-149.6
24.99
17.760
103.9
-32.77
0.023
27.4
0.351
-135.5
28.88
0.7
0.834
-155.1
23.82
15.516
99.9
-32.40
0.024
25.8
0.349
-141.9
28.11
0.8
0.840
-159.7
22.76
13.742
96.6
-32.40
0.024
24.6
0.349
-146.9
27.58
0.9
0.845
-163.3
21.83
12.346
93.6
-32.04
0.025
24.2
0.349
-151.1
26.94
1
0.848
-166.4
20.96
11.164
91.0
-32.04
0.025
23.8
0.347
-154.3
26.50
1.5
0.854
-177.7
17.59
7.579
80.6
-31.37
0.027
23.5
0.344
-165.8
24.48
1.9
0.857
175.9
15.60
6.024
73.9
-30.75
0.029
24.4
0.344
-171.2
23.17
2
0.853
174.4
15.36
5.863
72.6
-30.46
0.030
24.9
0.335
-171.8
22.91
2.4
0.853
168.9
13.79
4.894
66.5
-29.90
0.032
25.8
0.339
-176.8
21.85
3
0.855
161.6
11.83
3.902
57.9
-29.12
0.035
26.6
0.337
177.0
19.60
4
0.858
150.8
9.27
2.906
44.6
-27.74
0.041
26.5
0.356
168.5
16.23
5
0.864
140.7
7.20
2.292
31.6
-26.56
0.047
24.3
0.378
160.6
14.19
6
0.871
131.7
5.48
1.879
19.4
-25.35
0.054
21.2
0.402
152.4
12.69
7
0.869
123.5
4.04
1.593
7.5
-24.29
0.061
17.4
0.427
144.6
11.18
8
0.880
115.2
2.73
1.370
-4.3
-23.35
0.068
12.6
0.449
136.1
10.39
9
0.883
106.8
1.77
1.226
-16.1
-22.27
0.077
7.0
0.465
127.4
9.70
10
0.884
95.7
0.70
1.084
-29.0
-21.41
0.085
-0.8
0.489
116.6
8.70
11
0.874
85.1
-0.34
0.962
-41.6
-20.63
0.093
-8.8
0.505
106.0
7.20
12
0.874
74.1
-1.39
0.852
-52.8
-19.91
0.101
-16.6
0.544
97.2
6.30
13
0.877
63.3
-2.52
0.748
-64.5
-19.49
0.106
-24.6
0.596
85.9
5.46
14
0.884
57.9
-3.64
0.658
-74.6
-19.02
0.112
-31.9
0.638
74.7
4.95
15
0.894
46.8
-4.81
0.575
-85.4
-18.71
0.116
-39.8
0.662
65.9
4.29
16
0.896
43.3
-5.66
0.521
-93.6
-18.49
0.119
-47.8
0.699
56.1
4.06
17
0.898
31.9
-7.25
0.434
-102.6
-18.49
0.119
-55.1
0.748
47.7
2.82
18
0.918
20.8
-8.61
0.371
-110.5
-18.94
0.113
-62.6
0.718
39.3
1.75
相關(guān)PDF資料
PDF描述
ATF-531P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
ATF-54143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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