參數(shù)資料
型號: ATF-531P8-TR2
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝: 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
文件頁數(shù): 10/16頁
文件大小: 142K
代理商: ATF-531P8-TR2
3
ATF-531P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4V, Ids = 135 mA
V
0.68
Vth
Threshold Voltage
Vds = 4V, Ids = 8 mA
V
0.3
Idss
Saturated Drain Current
Vds = 4V, Vgs = 0V
A
3.7
Gm
Transconductance
Vds = 4.5V, Gm =
Idss/Vgs;
mmho
650
?Vgs = Vgs1 - Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
A
-10
-0.34
NF
Noise Figure[1]
f = 2 GHz
dB
0.6
1
f = 900 MHz
dB
0.6
G
Gain[1]
f = 2 GHz
dB
18.5
20
21.5
f = 900 MHz
dB
25
OIP3
Output 3rd Order
f = 2 GHz
dBm
35.5
38
Intercept Point[1,2]
f = 900 MHz
dBm
37
P1dB
Output 1dB
f = 2 GHz
dBm
24.5
Compressed[1]
f = 900 MHz
dBm
23
PAE
Power Added Efficiency
f = 2 GHz
%
57
f = 900 MHz
%
45
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
-68
Power Ratio[1,3]
Offset BW = 10 MHz
dBc
-64
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = -165°
(1.8 dB loss)
Output
Matching Circuit
Γ_mag = 0.09
Γ_ang = 118°
(1.1 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
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ATF-531P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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