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參數(shù)資料
| 型號： | ATF-531P8-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-TR1 |
7
ATF-531P8 Typical Performance Curves (at 25
°C unless specified otherwise)
Tuned for Optimal OIP3, continued
Figure 24. OIP3 vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
-40
°C
25
°C
85
°C
FREQUENCY (GHz)
45
40
35
30
25
20
0.5
2.5
1.5
3.5
4.5
5.5
OIP3
(dBm)
Figure 25. Small Signal Gain vs. Temp and
Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
20
15
10
5
0
0.5
2.5
1.5
3.5
4.5
5.5
GAIN
(dB)
Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
30
25
20
15
10
0.5
2.5
1.5
3.5
4.5
5.5
P1dB
(dBm)
Figure 27. PAE vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
80
70
60
50
40
30
20
10
0
0.5
2.5
1.5
3.5
4.5
5.5
PAE
(%)
-40
°C
25
°C
85
°C
-40
°C
25
°C
85
°C
-40
°C
25
°C
85
°C
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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