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參數(shù)資料
| 型號(hào)： | ATF-531P8-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-TR1 |
6
ATF-531P8 Typical Performance Curves, continued (at 25
°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
Figure 17. PAE vs. Idq and Vds at 900 MHz.
3V
4V
5V
Idq (mA)
60
50
40
30
20
10
0
75
180
105
90
135
150
165
120
PAE
(%)
Figure 18. PAE vs. Idq and Vds at 2 GHz.
3V
4V
5V
Idq (mA)
60
50
40
30
20
10
0
75
180
105
90
135
150
165
120
PAE
(%)
Figure 19. PAE vs. Idq and Vds at 3.9 GHz.
3V
4V
5V
Idq (mA)
60
50
40
30
20
10
0
75
180
105
90
135
150
165
120
PAE
(%)
Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 21. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
3V
4V
5V
Ids (mA)
12
10
8
6
4
2
0
75
180
105
90
135
150
165
120
SMALL
SIGNAL
GAIN
(dB)
Figure 22. P1dB vs. Idq and Vds at 5.8 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBm)
Figure 23. PAE vs. Idq and Vds at 5.8 GHz.
3V
4V
5V
Idq (mA)
60
50
40
30
20
10
0
75
180
105
90
135
150
165
120
PAE
(%)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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