- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42903 > ATF-531P8-TR1 (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF資料下載
參數(shù)資料
| 型號： | ATF-531P8-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-TR1 |
3
ATF-531P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4V, Ids = 135 mA
V
—
0.68
—
Vth
Threshold Voltage
Vds = 4V, Ids = 8 mA
V
—
0.3
—
Idss
Saturated Drain Current
Vds = 4V, Vgs = 0V
A
—
3.7
—
Gm
Transconductance
Vds = 4.5V, Gm =
Idss/Vgs;
mmho
—
650
—
?Vgs = Vgs1 - Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
A
-10
-0.34
—
NF
Noise Figure[1]
f = 2 GHz
dB
—
0.6
1
f = 900 MHz
dB
—
0.6
—
G
Gain[1]
f = 2 GHz
dB
18.5
20
21.5
f = 900 MHz
dB
—
25
—
OIP3
Output 3rd Order
f = 2 GHz
dBm
35.5
38
—
Intercept Point[1,2]
f = 900 MHz
dBm
—
37
—
P1dB
Output 1dB
f = 2 GHz
dBm
—
24.5
—
Compressed[1]
f = 900 MHz
dBm
—
23
—
PAE
Power Added Efficiency
f = 2 GHz
%
—
57
—
f = 900 MHz
%
—
45
—
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
—
-68
—
Power Ratio[1,3]
Offset BW = 10 MHz
dBc
—
-64
—
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = -165°
(1.8 dB loss)
Output
Matching Circuit
Γ_mag = 0.09
Γ_ang = 118°
(1.1 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。