參數(shù)資料
型號： ATF-521P8-TR2G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù)： 18/24頁
文件大?。?/td> 248K
代理商： ATF-521P8-TR2G
3
ATF-521P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
V
—
0.62
—
Vth
Threshold Voltage
Vds = 4.5V, Ids = 16 mA
V
—
0.28
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
A
—
14.8
—
Gm
Transconductance
Vds = 4.5V, Gm =
Idss/Vgs;
mmho
—
1300
—
Vgs = Vgs1 - Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
A
-20
0.49
—
NF
Noise Figure[1]
f = 2 GHz
dB
—
1.5
—
f = 900 MHz
dB
—
1.2
—
G
Gain [1]
f = 2 GHz
dB
15.5
17
18.5
f = 900 MHz
dB
—
17.2
—
OIP3
Output 3rd Order
f = 2 GHz
dBm
38.5
42
—
Intercept Point[1]
f = 900 MHz
dBm
—
42.5
—
P1dB
Output 1dB
f = 2 GHz
dBm
25
26.5
—
Compressed[1]
f = 900 MHz
dBm
—
26.5
—
PAE
Power Added Efficiency
f = 2 GHz
%
45
60
—
f = 900 MHz
%
—
56
—
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
—
-51.4
—
Power Ratio[1,2]
Offset BW = 10 MHz
dBc
—
-61.5
—
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.55
Γ_ang = -166°
(1.1 dB loss)
Output
Matching Circuit
Γ_mag = 0.35
Γ_ang = 168°
(0.9 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
相關(guān)PDF資料
PDF描述
ATF-521P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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