- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42903 > ATF-521P8-TR2G (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF資料下載
參數(shù)資料
| 型號： | ATF-521P8-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大?。?/td> | 248K |
| 代理商： | ATF-521P8-TR2G |
18
As described previously the input
impedance must be matched to
S11* in order to guarantee return
loss greater than 10 dB. A high
pass network is chosen for this
match. The output is matched to
Γ
L with another high pass
network. The next step is to
choose the proper DC biasing
conditions. From the data sheet,
ATF-521P8 produces good
linearity at a drain current of
200mA and a drain to source
voltage of 4.5V. Thus to construct
the active bias circuit described,
the following parameters are
given:
Ids = 200 mA
I
R = 10 mA
Vdd = 5 V
V
ds = 4.5 V
Vg = 0.62 V
V
be1 = 0.65 V
Using equations 4, 5, 6, and 7, the
biasing resistor values are
calculated in column 2 of table 1,
and the actual values used are
listed in column 3.
Resistor
Calculated
Actual
R1
50
49.9
R2
385
383
R3
2.38
2.37
R4
62
61.9
Table 1. Resistors for Active Bias.
The entire circuit schematic for a
2.14 GHz Tx driver amplifier is
shown below in Figure 14.
Capacitors C4, C5, and C6 are
added as a low frequency bypass.
These terminate second order
harmonics and help improve
linearity. Resistors R5 and
R6 also help terminate low
frequencies, and can prevent
resonant frequencies between
the two bypass capacitors.
Performance of ATF-521P8 at
2140 MHz
ATF-521P8 delivers excellent
performance in the WCDMA
frequency band. With a drain-to-
source voltage of 4.5V and a
drain current of 200 mA, this
device has 16.5 dB of gain and
1.55 dB of noise figure as show in
Figure 15.
FREQUENCY (GHz)
GAIN
and
NF
(dB)
1.6
20
15
10
5
0
2.6
1.8
2.2
2.4
2.0
Gain
NF
Figure 15. Gain and Noise Figure vs. Frequency.
Input and output return loss are
both greater that 10 dB. Although
somewhat narrowband, the
response is adequate in the
frequency range of 2110 MHz to
2170 MHz for the WCDMA
downlink. If wider band response
is need, using a balanced configu-
ration improves return loss and
doubles OIP3.
FREQUENCY (GHz)
INPUT
AND
OUTPUT
RETURN
LOSS
(dB)
1.6
0
-5
-10
-15
2.6
1.8
2.2
2.4
2.0
S11
S22
Figure 16. Input and Output Return Loss vs.
Frequency.
Perhaps the most critical system
level specification for the
ATF-521P8 lies in its distortion-
less output power. Typically,
amplifiers are characterized for
linearity by measuring OIP3. This
is a two-tone harmonic measure-
ment using CW signals. But
because WCDMA is a modulated
waveform spread across
3.84 MHz, it is difficult to corre-
lated good OIP3 to good ACLR.
Thus, both are measured and
presented to avoid ambiguity.
Figure 14. 2140 MHz Schematic.
C1=1.2pF
RFin
RFout
L4=3.9nH
L1=1.0nH
L2=12nH
L3=39nH
R6=1.2
R5=10
R3=2.37
R4=61.9
C4=1
F
C3=4.7pF
C8=1.5pF
C7=150pF
C5=1
F
C6=.1
F
Q2
IC2
IR
C2=1.5nH
R1=49.9
R2=383
Q1
Vbe1+
Vg
Vds
+5V
2
7
ATF-521P8
2PL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-521P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR1 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
| ATF-53189 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-53189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-53189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-53189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。