參數(shù)資料
型號(hào): ATF-521P8-TR1
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號(hào)晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝: 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù): 19/24頁
文件大?。?/td> 248K
代理商: ATF-521P8-TR1
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at
4.5V, 200 mA quiesent bias:
Optimum OIP3
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.9
0.413
10.5
0.314
179.0
42.7
16.0
27.0
54.0
2
0.368
162.0
0.538
-176.0
42.5
15.8
27.5
55.3
2.4
0.318
169.0
0.566
-169.0
42.0
14.1
27.4
53.5
3.9
0.463
-134.0
0.495
-159.0
40.3
9.6
27.3
43.9
Optimum P1dB
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.9
0.587
12.7
0.613
-172.1
39.1
14.5
29.3
49.6
2
0.614
126.1
0.652
-172.5
39.5
12.9
29.3
49.5
2.4
0.649
145.0
0.682
-171.5
40.0
12.0
29.4
46.8
3.9
0.552
-162.8
0.670
-151.2
38.1
9.6
27.9
39.1
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.5 pF
3.9 nH
1.5 pF
RF Output
50 Ohm
.02
λ
110 Ohm
.03
λ
110 Ohm
.03
λ
50 Ohm
.02
λ
DUT
1 pF
12 nH
15 Ohm
2.2
F
Gate
Supply
47 nH
2.2
F
Drain
Supply
相關(guān)PDF資料
PDF描述
ATF-521P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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