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參數(shù)資料
| 型號： | ATF-521P8-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 248K |
| 代理商： | ATF-521P8-TR1 |
2
ATF-521P8 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain – Source Voltage[2]
V7
V
GS
Gate – Source Voltage[2]
V
-5 to 1
V
GD
Gate Drain Voltage[2]
V
-5 to 1
I
DS
Drain Current [2]
mA
500
I
GS
Gate Current
mA
46
P
diss
Total Power Dissipation [3]
W
1.5
P
in max.
RF Input Power
dBm
27
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance [4]
°C/W
45
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 22 mW/
°C for TB > 83°C.
4. Channel to board thermal resistance
measured using 150
°C Liquid Crystal
Measurement method.
Product Consistency Distribution Charts [5, 6]
NF (dB)
Figure 2. NF @ 2 GHz, 4.5 V, 200 mA.
Nominal = 1.5 dB.
0
1.5
0.5
1
2.5
23
180
150
120
90
60
30
0
Stdev = 0.19
+3 Std
-3 Std
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4.5 V, 200 mA.
Nominal = 41.9 dBm, LSL = 38.5 dBm.
37
43
39
41
47
45
49
150
120
90
60
30
0
Cpk = 0.86
Stdev = 1.32
+3 Std
-3 Std
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4.5 V, 200 mA.
Nominal = 17.2 dB, LSL = 15.5 dB,
USL = 18.5 dB.
15
18
16
17
19
180
150
120
90
60
30
0
Cpk = 2.13
Stdev = 0.21
+3 Std
-3 Std
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
VDS (V)
Figure 1. Typical I-V Curves.
(VGS= 0.1 V per step)
I DS
(mA)
0.5V
Vgs = 0.6V
0.7V
0.8V
0.4V
02
6
48
600
500
400
300
200
100
0
P1dB (dBm)
Figure 5. P1dB @ 2 GHz, 4.5 V, 200 mA.
Nominal = 26.5 dBm, LSL = 25 dBm.
25
26.5
25.5
26
27
27.5
300
250
200
150
100
50
0
Cpk = 4.6
Stdev = 0.11
+3 Std
-3 Std
5. Device can safely handle +27dBm RF Input
Power provided IGS is limited to 46mA. IGS
at P1dB drive level is bias circuit dependent.
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