參數(shù)資料
型號(hào): ATF-52189-TR1
元件分類: 小信號(hào)晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE PACKAGE-3
文件頁(yè)數(shù): 5/18頁(yè)
文件大小: 2247K
代理商: ATF-52189-TR1
1
3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The F
min values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.
ATF-52189 Typical Scattering and Noise Parameters at 25
°C, VDS = 4.5V, IDS = 200 mA
Figure
51. MSG/MAG & |S21|2 vs. Frequency
at 4.5V/200 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
S21
MAG
MSG
Freq
S11
S21
S12
MSG/MAG
(GHz)Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.848
-84.4
33.58
47.752
136.0
-37.08
0.014
51.6
0.360
-104.6
35.33
0.2
0.856
-124.7
30.01
31.649
114.6
-34.42
0.019
35.9
0.442
-136.7
32.22
0.3
0.863
-144.9
27.16
22.811
102.9
-33.15
0.022
28.7
0.473
-151.3
30.16
0.4
0.868
-157.3
24.94
17.656
95.1
-32.77
0.023
24.7
0.487
-159.9
28.85
0.5
0.882
-170.8
21.81
12.320
89.4
-33.56
0.021
22.5
0.562
-173.9
27.68
0.6
0.885
-176.3
20.27
10.315
85.5
-33.56
0.021
22.2
0.567
-177.2
26.91
0.7
0.886
179.2
18.98
8.894
82.0
-33.15
0.022
22.1
0.568
-179.8
26.07
0.8
0.886
175.4
17.88
7.831
78.8
-32.77
0.023
22.1
0.568
177.7
25.32
0.9
0.885
171.9
16.91
7.007
75.8
-32.40
0.024
22.3
0.567
175.6
24.65
1.0
0.887
168.6
16.01
6.320
72.9
-32.40
0.024
22.4
0.566
173.6
24.21
1.5
0.886
154.7
12.65
4.291
59.3
-30.75
0.029
22.1
0.560
164.3
21.70
2.0
0.886
141.7
10.29
3.271
46.3
-29.37
0.034
19.7
0.549
155.6
18.69
2.5
0.881
128.7
8.52
2.668
33.1
-28.18
0.039
15.0
0.543
146.6
16.11
3.0
0.879
116.3
7.28
2.312
20.4
-27.38
0.043
8.7
0.548
138.1
14.68
3.5
0.885
106.8
6.33
2.073
9.5
-27.01
0.045
2.5
0.564
129.6
13.97
4.0
0.891
97.4
5.27
1.835
-1.4
-26.65
0.047
-3.8
0.580
121.0
13.15
5.0
0.903
78.4
2.66
1.358
-23.2
-25.98
0.050
-16.3
0.613
104.0
11.08
6.0
0.915
59.5
-1.10
0.881
-45.0
-25.35
0.054
-28.8
0.645
86.9
8.05
7.0
0.948
43.4
-3.44
0.673
-64.1
-26.02
0.050
-40.5
0.686
74.4
8.04
8.0
0.960
31.6
-5.78
0.514
-81.8
-26.74
0.046
-52.4
0.729
60.9
7.37
9.0
0.941
23.4
-8.34
0.383
-97.0
-28.18
0.039
-64.2
0.772
47.7
4.20
10.0
0.945
14.0
-10.40
0.302
-112.0
-29.63
0.033
-80.8
0.805
36.5
3.35
11.0
0.938
3.0
-12.32
0.242
-129.2
-33.15
0.022
-113.9
0.826
26.8
1.99
12.0
0.914
-3.7
-13.89
0.202
-144.1
-38.42
0.012
-156.0
0.843
16.9
-0.42
13.0
0.953
-15.1
-15.86
0.161
-164.5
-37.72
0.013
98.9
0.843
7.7
0.22
14.0
0.946
-19.8
-17.92
0.127
-172.6
-39.17
0.011
49.2
0.849
1.0
-2.67
15.0
0.939
-21.2
-18.64
0.117
178.8
-43.10
0.007
72.1
0.877
-4.5
-2.97
16.0
0.948
-24.7
-19.17
0.110
170.6
-44.44
0.006
76.0
0.874
-8.4
-2.92
17.0
0.947
-33.1
-18.13
0.124
157.2
-38.42
0.012
119.6
0.883
-13.2
-1.28
18.0
0.900
-45.1
-17.27
0.137
140.4
-33.98
0.020
115.7
0.859
-21.3
-3.92
S22
Freq
Fmin
Rn/50
Ga
GHz
dB
Mag
Ang
dB
0.5
0.92
0.409
177.1
0.15
19.38
1.0
1.02
0.480
-169.1
0.10
17.52
2.0
1.21
0.602
-141.8
0.08
15.64
3.0
1.41
0.700
-115.6
0.12
12.74
4.0
1.59
0.772
-93.6
0.23
11.05
5.0
1.81
0.841
-69.9
0.54
9.72
6.0
2.01
0.891
-52.2
0.70
8.62
7.0
2.21
0.931
-39.1
0.98
7.78
8.0
2.41
0.965
-31.5
1.33
6.72
G amma Opt
相關(guān)PDF資料
PDF描述
ATF-521P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-52189-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-521P8 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-521P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-521P8-BLKG 制造商:Avago Technologies 功能描述: