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參數資料
| 型號： | ATF-52189-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數： | 14/18頁 |
| 文件大小： | 2247K |
| 代理商： | ATF-52189-TR1 |
5
ATF-52189 Typical Performance Curves (at 25
°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.
Figure 7. OIP3 vs. Ids and Vds at 900 MHz.
Ids (mA)
OIP3
(dBm)
100
400
150
200
250
300
350
45
40
35
30
25
20
15
3V
4V
4.5V
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
Ids (mA)
OIP3
(dBm)
100
400
150
200
250
300
350
45
40
35
30
25
20
15
3V
4V
4.5V
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.
Ids (mA)
OIP3
(dBm)
100
400
150
200
250
300
350
45
40
35
30
25
20
15
3V
4V
4.5V
Figure 10. Small Signal Gain vs. Ids and
Vds at 900 MHz.
Ids (mA)
GAIN
(dB)
100
400
150
200
250
300
350
19
18
17
16
15
14
13
12
3V
4V
4.5V
Figure 11. Small Signal Gain vs. Ids and
Vds at 2 GHz.
Ids (mA)
GAIN
(dB)
100
400
150
200
250
300
350
19
18
17
16
15
14
13
12
3V
4V
4.5V
Figure 12. Small Signal Gain vs. Ids and
Vds at 3.9 GHz.
Ids (mA)
GAIN
(dB)
100
400
150
200
250
300
350
14
13
12
11
10
9
8
7
3V
4V
4.5V
Figure 13. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 900 MHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
14
-6
-2
2
6
10
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 14. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 900 MHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
14
-6
-2
2
6
10
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 15. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 900 MHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
14
-6
-2
2
6
10
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_4.5V
Pout_4.5V
PAE_4.5V
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-52189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-521P8 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
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