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參數(shù)資料
| 型號： | ATF-52189-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 18/18頁 |
| 文件大?。?/td> | 2247K |
| 代理商： | ATF-52189-TR1 |
9
ATF-52189 Typical Performance Curves (at 25
°C unless specified otherwise), continued
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA.
Figure 35. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 36. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 37. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4.5V
Pout_4.5V
PAE_4.5V
Figure 38. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-8
24
-4
0
4
8
12
16
20
35
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 39. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-8
24
-4
0
4
8
12
16
20
35
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 40. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%
)
-8
24
-4
0
4
8
12
16
20
35
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
Gain_4.5V
Pout_4.5V
PAE_4.5V
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
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PDF描述 |
|---|---|
| ATF-521P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-52189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-521P8 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
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