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參數(shù)資料
| 型號： | ATF-34143-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 273K |
| 代理商： | ATF-34143-BLK |
3
ATF-34143 Electrical Specifications
TA=25°C,RFparametersmeasuredinatestcircuitforatypicaldevice
Symbol
Parameters and Test Conditions
Units
Min.
Typ.[2]
Max.
Idss[1]
SaturatedDrainCurrent
VDS=1.5V,VGS=0V
mA
90
118
145
VP[1]
PinchoffVoltage
VDS=1.5V,IDS=10%ofIdss
V
-0.65
-0.5
-0.35
Id
QuiescentBiasCurrent
VGS=-0.34V,VDS=4V
mA
—
60
—
gm[1]
Transconductance
VDS=1.5V,gm=Idss/VP mmho
180
230
—
IGDO
GatetoDrainLeakageCurrent
VGD=5V
A
500
Igss
GateLeakageCurrent
VGD=VGS=-4V
A
—
30
300
NF
NoiseFigure
f=2GHz
VDS=4V,IDS=60mA
dB
0.5
0.8
VDS=4V,IDS=30mA
0.5
f=900MHz
VDS=4V,IDS=60mA
dB
0.4
Ga
AssociatedGain
f=2GHz
VDS=4V,IDS=60mA
dB
16
17.5
19
VDS=4V,IDS=30mA
17
f=900MHz
VDS=4V,IDS=60mA
dB
21.5
OIP3
Output3rdOrder
f=2GHz
VDS=4V,IDS=60mA
dBm
29
31.5
InterceptPoint[3]
+5dBmPout/Tone
VDS=4V,IDS=30mA
30
f=900MHz
VDS=4V,IDS=60mA
dBm
31
+5dBmPout/Tone
P1dB
1dBCompressed
f=2GHz
VDS=4V,IDS=60mA
dBm
20
InterceptPoint[3]
VDS=4V,IDS=30mA
19
f=900MHz
VDS=4V,IDS=60mA
dBm
18.5
Notes:
1. Guaranteedatwaferprobelevel
2. Typicalvaluedeterminedfromasamplesizeof450partsfrom9wafers.
3. Usingproductiontestboard.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.This circuit represents a trade-off
between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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