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參數(shù)資料
| 型號(hào)： | ATF-34143-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 3/15頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | ATF-34143-BLK |
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11
Noise Parameter Applications Information
Fminvaluesat2GHzandhigherarebasedonmeasure-
mentswhiletheFminsbelow2GHzhavebeenextrapo-
lated.TheFminvaluesarebasedonasetof16noisefigure
measurementsmadeat16differentimpedancesusingan
ATNNP5testsystem.Fromthesemeasurements,atrue
Fminiscalculated.Fminrepresentsthetrueminimumnoise
figureofthedevicewhenthedeviceispresentedwithan
impedancematchingnetworkthattransformsthesource
impedance,typically50,toanimpedancerepresented
bythereflectioncoefficientΓo.Thedesignermustdesign
amatchingnetworkthatwillpresentΓotothedevicewith
minimalassociatedcircuitlosses.Thenoisefigureofthe
completedamplifierisequaltothenoisefigureofthe
deviceplusthelossesofthematchingnetworkpreceding
thedevice.ThenoisefigureofthedeviceisequaltoFmin
onlywhenthedeviceispresentedwithΓo.Ifthereflection
coefficientofthematchingnetworkisotherthanΓo,then
thenoisefigureofthedevicewillbegreaterthanFmin
basedonthefollowingequation.
NF=Fmin+4Rn|Γs–Γo|2
Zo(|1+Γo|2)(1–Γs|2)
WhereRn/Zoisthenormalizednoiseresistance,Γoisthe
optimumreflectioncoefficientrequiredtoproduceFmin
andΓsisthereflectioncoefficientofthesourceimped-
anceactuallypresentedtothedevice.Thelossesofthe
matchingnetworksarenon-zeroandtheywillalsoadd
tothenoisefigureofthedevicecreatingahigherampli-
fier noise figure. The losses of the matching networks
arerelatedtotheQofthecomponentsandassociated
printedcircuitboardloss.Γoistypicallyfairlylowathigher
frequenciesandincreasesasfrequencyislowered.Larger
gatewidthdeviceswilltypicallyhavealowerΓoascom-
paredtonarrowergatewidthdevices.
TypicallyforFETs,thehigherΓousuallyinfersthatanim-
pedancemuchhigherthan50isrequiredforthedevice
to produce Fmin. AtVHF frequencies and even lower L
Bandfrequencies,therequiredimpedancecanbeinthe
vicinity of several thousand ohms. Matching to such a
highimpedancerequiresveryhi-Qcomponentsinorder
to minimize circuit losses. As an example at 900 MHz,
whenairwwoundcoils(Q>100)areusedformatching
networks,thelosscanstillbeupto0.25dBwhichwilladd
directlytothenoisefigureofthedevice.Usingmuiltilayer
moldedinductorswithQsinthe30to50rangeresults
inadditionallossovertheairwoundcoil.Lossesashigh
as0.5dBorgreateraddtothetypical0.15dBFminofthe
devicecreatinganamplifiernoisefigureofnearly0.65dB.
Adiscussionconcerningcalculatedandmeasuredcircuit
lossesandtheireffectonamplifiernoisefigureiscovered
inAvagoApplication1085.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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