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參數(shù)資料
| 型號(hào)： | ATF-10XXX |
| 英文描述： | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| 中文描述： | 低噪聲砷化鎵場(chǎng)效應(yīng)管-可靠性數(shù)據(jù)（2萬(wàn)PDF格式） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | ATF-10XXX |
www.hp.com/go/rf
For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call:
Americas/Canada:
1-800-235-0312 or 408-654-8675
Far E ast/Australasia:
Call your local HP sales office.
J apan:
(81 3) 3335-8152
E urope:
Call your local HP sales office. Data subject to change. Copyright 1998 Hewlett-Packard Co. Obsoletes 5966-0233E
Printed in U.S.A.
5966-2942E (3/98)
C. Example of Failure Rate Calculation:
At 100
°
C with a device operating 8 hours a day, 5 days a week, the percent utilization is:
% Utilization = (8 hrs/day x 5 days/wk)
÷
168 hrs/wk = 25%
Then the point failure rate per year is:
(5 x 10
-10
) x (25%) x (8760 hrs/yr) = 1.1 x 10
-6
% per year
Likewise, the 90% confidence level failure rate per year is:
(1.0 x 10
-9
/hr) x (25%) x (8760 hrs/yr) = 2.2 x 10
-6
% per year
MIL-STD-883
Reference
1011
1010
—
2002
2001
2003
Units
Tested
368
368
290
135
135
245
Units
Failed
0
0
0
0
0
0
Test Name
Thermal Shock
Temperature Cycle
Moisture Resistance
Mechanical Shock*
Acceleration*
Solderability
* Applicable to ceramic packages only
Test Conditions
-65/150
°
C, 100 cycles
-65 to 150
°
C, 100 cycles
+121
°
C, 100% RH, 96 hrs
1500 G’s, 0.5 msec. Pulse
20,000 G’s, 1 min. all axis
245
°
C, 5 seconds dwell
2. Environmental Tests
Notes:
1. The point MTTF is simply the total device
hours divided by the number of failures.
2. The MTTF and failure rate represent the
performance level for which there is a
90% probability of the device doing better
than the stated value. The confidence
level is based on the statistics of failure
distribution. The assumed distribution is
exponential. This particular distribution
is commonly used in describing useful
life failures.
3. FIT is defined as Failure in Time, or
specifically, failures per billion hours.
The relationship between MTTF and FIT
is as follows: FIT = 10
9
/(MTTF).
400
350
300
250
200
150
100
50
25
T
°
C
103
10
4
10
5
10
6
10
7
10
8
10
9
MTTF – MEAN TIME TO FAILURE (HRS.)
Ea = 1.2 eV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13XXX | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF-13100 | 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪聲砷化鎵 FET) |
| ATF-13100-GP3 | 2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13336 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF13036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | CHIP |
| ATF-13100 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13100-GP3 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF13136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
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