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| 型號： | ATF-13XXX |
| 英文描述： | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| 中文描述： | 低噪聲砷化鎵場效應(yīng)管-可靠性數(shù)據(jù)（2萬PDF格式） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | ATF-13XXX |
Low Noise Gallium Arsenide FET
Reliability Data
Description
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard in accordance with the
ATF-10XXX
ATF-13XXX
latest revision of MIL-STD-883.
Data was gathered from the
product qualification, reliability
monitor, and engineering evalua-
tion for the LYG GaAs process.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Communications
Components Designer's Catalog.
Units
Tested
150
Total
Total
Failed
Failure Rate
(%/1K Hours)
0
Test Name
High Temperature
Operating Life
(O.L.)
High Temperature
Storage (HTS)*
Test Condition
Nominal Bias at
T
ch
= 175
°
C, 1000 hrs.
Device Hrs.
15,000
0
Ambient Temperature
T
A
= 150
°
C, 1000 hrs.
225
225,000
0
0
1. Life Test
A. Demonstrated Performance
Point
(1)
90% Confidence Level
(2)
J unction
Temp.
T
J
(
°
C)
175
150
100
47
MTTF*
(hours)
3 x 10
-6
2 x 10
-7
2 x 10
-9
8 x 10
-11
MTTF
FIT
( 3)
333
50
.05
.001
MTTF
(hours)
0.5 x 10
-6
9.5 x 10
-8
9.5 x 10
-8
3.5 x 10
-11
FIT
( 3)
2000
105
1.05
.0003
*MTTF data calculated from high temperature Operating Life tests.
B. Failure Rate Prediction
The failure rate will depend on
the junction temperature of the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.2eV,
and the device thermal resistance
of the stress board is 130
°
C/W,
and listed in the following table.
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