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參數(shù)資料
| 型號： | ATF-13100 |
| 英文描述： | 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪聲砷化鎵 FET) |
| 中文描述： | 2-18 GHz的低噪聲砷化鎵場效應管（2-18 GHz的低噪聲砷化鎵場效應管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | ATF-13100 |
5-33
2–18 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
1.1 dB Typical at 12 GHz
High Associated Gain:
9.5 dB Typical at 12 GHz
High Output Power:
17.5 dBm Typical P
1 dB
at 12 GHz
ATF-13100
Chip Outline
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Parameters and Test Conditions
[1]
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
Units Min.
dB
dB
dB
dB
dB
dB
Typ. Max.
0.8
1.1
1.5
12.0
9.5
8.0
17.5
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 12.0 GHz dBm
1.2
G
A
Gain @ NF
O
; V
DS
= 2.5 V, I
DS
= 20 mA
9.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain; V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current; V
DS
= 2.5 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
f = 12.0 GHz
dB
8.5
55
50
-1.5
mmho
mA
V
30
40
-3.0
90
-0.8
Note:
1.
RF performance is determined by assembling and testing 10 samples per wafer
.
Description
The ATF-13100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applica-
tions in the 2-18GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
The recommended mounting
procedure is to die attach at a
stage temperature of 300
°
C using
a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
“Chip Use” in the APPLICATIONS
section.
D
G
S
S
5965-8694E
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-13100-GP3 | 2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13336 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13100-GP3 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF13136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-XVAR |
| ATF13284 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13284 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1-16 GHz Low Noise Gallium Arsenide FET |
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