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參數(shù)資料
| 型號(hào)： | ATF-13100 |
| 英文描述： | 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪聲砷化鎵 FET) |
| 中文描述： | 2-18 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管（2-18 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | ATF-13100 |
5-34
ATF-13100 Absolute Maximum Ratings
Absolute
Maximum
[1]
+5
-4
-6
I
DSS
225
175
-65 to +175
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
MOUNTING
SURFACE
= 25
°
C.
3. Derate at 4 mW/
°
C for
T
MOUNTING
SURFACE
> 119
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-13100 Typical Performance, T
A
= 25
°
C
2.0
Part Number Ordering Information
Part Number
ATF-13100-GP3
Devices Per Tray
50
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 250
°
C/W; T
CH
= 150
°
C
1
μ
m Spot Size
[4]
ATF-13100 Noise Parameters:
V
DS
= 2.5 V, I
DS
= 20 mA
Freq.
NF
O
GHz
dB
Γ
opt
Mag
0.60
0.32
0.25
0.23
0.32
Ang
30
68
102
-165
-112
R
N
/50
4.0
6.0
8.0
12.0
16.0
0.4
0.7
0.8
1.1
1.5
0.32
0.21
0.15
0.09
0.21
FREQUENCY (GHz)
N
O
I
DS
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
.
V
DS
= 2.5V, f = 12.0 GHz.
N
O
0
10
5
20
30
25
15
35
1.5
1.0
0.5
0
20
15
10
5
0
G
A
12
10
8
6
G
A
2.0
6.0
4.0
8.0 10.0 12.0 16.0
4.0
3.0
2.0
1.0
G
A
G
A
NF
O
NF
O
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2.5V, I
DS
= 20 mA, T
A
= 25
°
C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13100-GP3 | 2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13336 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13100-GP3 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF13136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-XVAR |
| ATF13284 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13284 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1-16 GHz Low Noise Gallium Arsenide FET |
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