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參數(shù)資料
| 型號(hào)： | ATA6670-FFQW |
| 廠商： | Atmel |
| 文件頁數(shù)： | 4/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX LIN DUAL 14VDFN |
| 標(biāo)準(zhǔn)包裝： | 6,000 |
| 系列： | * |
| 其它名稱： | ATA6670-FFQW-ND |
12
Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
5
INH 2 Output Pin (Only Available at Transceiver 2)
5.1
High-level voltage
Normal or Fail-safe mode
IINH2 = –15mA
INH2
VINH2H
VS2 –
0.75
VS2
V
A
5.2
Switch-on resistance between
VS2 and INH2
Normal or Fail-safe mode
INH2
RINH2
30
50
Ω
A
5.3
Leakage current
Transceiver 2 in Sleep mode
VINH2 = 0V/27V, VS2 = 27V
INH2
IINH2L
–3
+3
A
6
WAKE2 Input Pin (only available at Transceiver 2)
6.1
High-level input voltage
WAKE2
VWAKE2H
VS2 –
1V
VS2 +
0.3V
V
A
6.2
Low-level input voltage
IWAKE2 = typically –3A
WAKE2
VWAKE2L
–1V
VS2 –
3.3V
V
A
6.3
Wake2 pull-up current
VS2 < 27V
WAKE2
IWAKE2
–30
–10
A
6.4
High-level leakage current
VS2 = 27V, VWAKE2 = 27V
WAKE2
IWAKE2
–5
+5
A
7
LIN Bus Driver
7.1
Driver recessive output voltage
RLOAD = 500Ω/1kΩ
LIN
VBUSrec
0.9
×
VS
V
A
7.2
Driver dominant voltage
VBUSdom_DRV_LoSUP
VS = 7V, Rload = 500Ω
LIN
V_LoSUP
1.2
V
A
7.3
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 500Ω
LIN
V_HiSUP
2
V
A
7.4
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 1000Ω
LIN
V_LoSUP_1k
0.6
V
A
7.5
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 1000Ω
LIN
V_HiSUP_1k_
0.8
V
A
7.6
Pull-up resistor to VS
The serial diode is mandatory
LIN
RLIN
20
30
47
k
Ω
A
7.7
Voltage drop at the serial diodes
In pull-up path with Rslave
ISerDiode = 10mA
LIN
VSerDiode
0.4
1.0
V
D
7.8
LIN current limitation
VBUS = VBAT_max
LIN
IBUS_LIM
40
120
200
mA
A
7.9
Input leakage current at the
receiver, including pull-up
resistor as specified
Input leakage current
driver off
VBUS = 0V, VS = 12V
LIN
IBUS_PAS_dom
–1
mA
7.10 Leakage current LIN recessive
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS ≥ VBAT
LIN
IBUS_PAS_rec
10
20
A
7.11
Leakage current at ground loss;
control unit disconnected from
ground; loss of local ground
must not affect communication in
the residual network
GNDDevice = VS
VBAT =12V
0V < VBUS < 18V
LIN
IBUS_NO_Gnd
–10
+0.5
+10
A
5.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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