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參數(shù)資料
| 型號(hào)： | ATA6670-FFQW |
| 廠(chǎng)商： | Atmel |
| 文件頁(yè)數(shù)： | 2/19頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX LIN DUAL 14VDFN |
| 標(biāo)準(zhǔn)包裝： | 6,000 |
| 系列： | * |
| 其它名稱(chēng)： | ATA6670-FFQW-ND |
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10
Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Min.
Typ.
Max.
Unit
VS1, VS2
- Continuous supply voltage
–0.3
+40
V
WAKE2
- DC and transient voltage (with 2.7k
Ω serial resistor)
- Transient voltage according to ISO7637 (coupling
1nF)
–27
–150
+40
+100
V
Logic pins (RXD1, RXD2, TXD1, TXD2, EN1, EN2)
–0.3
+5.5
V
LIN1, LIN2
- DC voltage
- Transient voltage according to ISO7637 (coupling
1nF)
–27
–150
+40
+100
V
INH2
- DC voltage
–0.3
VS2 + 0.3
V
ESD according to IBEE LIN EMC
Test specification 1.0 following IEC 61000-4-2
- Pin VS1, VS2, LIN1, LIN2 to GND
- Pin WAKE2 (2.7k
Ω serial resistor)
±8
±6
KV
ESD HBM following STM5.1
with 1.5k
Ω / 100pF
- Pin VS1, VS2, LIN1, LIN2, WAKE2, INH2 to GND
±6
KV
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
±3
KV
CDM ESD STM 5.3.1
±750
V
Machine model ESD AEC-Q100-Rev.F (003)
±200
V
Junction temperature
Tj
–40
+150
°C
Storage temperature
Tstg
–55
+150
°C
4.
Thermal Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Unit
Thermal resistance junction to heat slug
RthJC
8
K/W
Thermal resistance junction to ambient, where heat slug
is soldered to PCB according to Jedec
RthJA
45
K/W
Thermal shutdown
Toff
150
165
180
°C
Thermal shutdown hysteresis
Thys
5
10
20
°C
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