參數(shù)資料
型號: AT91SAM7S32B-MU-999
廠商: Atmel
文件頁數(shù): 15/165頁
文件大?。?/td> 0K
描述: IC MCU ARM7 32KB FLASH 48-VQFN
產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
標(biāo)準(zhǔn)包裝: 3,500
系列: SAM7S
核心處理器: ARM7
芯體尺寸: 16/32-位
速度: 55MHz
連通性: I²C,SPI,SSC,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,DMA,POR,PWM,WDT
輸入/輸出數(shù): 21
程序存儲器容量: 32KB(32K x 8)
程序存儲器類型: 閃存
RAM 容量: 8K x 8
電壓 - 電源 (Vcc/Vdd): 1.65 V ~ 1.95 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 48-VFQFN 裸露焊盤
包裝: 帶卷 (TR)
配用: AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
AT91SAM7S-EK-ND - KIT EVAL FOR ARM AT91SAM7S
111
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
Figure 19-6. Example of Partial Page Programming
The Partial Programming mode works only with 32-bit (or higher) boundaries. It cannot be used with boundaries
lower than 32 bits (8 or 16-bit for example).
After programming, the page (the whole lock region) can be locked to prevent miscellaneous write or erase
sequences. The lock bit can be automatically set after page programming using WPL.
Data to be written are stored in an internal latch buffer. The size of the latch buffer corresponds to the page size.
The latch buffer wraps around within the internal memory area address space and appears to be repeated by the
number of pages in it.
Note:
Writing of 8-bit and 16-bit data is not allowed and may lead to unpredictable data corruption.
Data are written to the latch buffer before the programming command is written to the Flash Command Register
MC_FCR. The sequence is as follows:
Write the full page, at any page address, within the internal memory area address space using only 32-bit
access.
Programming starts as soon as the page number and the programming command are written to the Flash
Command Register. The FRDY bit in the Flash Programming Status Register (MC_FSR) is automatically
cleared.
When programming is completed, the bit FRDY in the Flash Programming Status Register (MC_FSR) rises. If
an interrupt was enabled by setting the bit FRDY in MC_FMR, the interrupt line of the Memory Controller is
activated.
Two errors can be detected in the MC_FSR register after a programming sequence:
Programming Error: A bad keyword and/or an invalid command have been written in the MC_FCR register.
Lock Error: The page to be programmed belongs to a locked region. A command must be previously run to
unlock the corresponding region.
19.2.4.2
Erase All Command
The entire memory can be erased if the Erase All Command (EA) in the Flash Command Register MC_FCR is
written.
Erase All operation is allowed only if there are no lock bits set. Thus, if at least one lock region is locked, the bit
LOCKE in MC_FSR rises and the command is cancelled. If the bit LOCKE has been written at 1 in MC_FMR, the
interrupt line rises.
Erase All Flash
Programming of the second part of Page 7
Programming of the third part of Page 7
32 bits wide
16 words
FF
...
CA
FE
CA
FE
CA
FE
CA
FE
CA
FE
CA
FE
FF
CA
FE
CA
FE
CA
FE
CA
FE
CA
FE
CA
FE
DE
CA
DE
CA
DE
CA
DE
CA
DE
CA
DE
CA
FF
Step 1.
Step 2.
Step 3.
...
(NEBP = 1)
16 words
Page 7 erased
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