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參數(shù)資料
| 型號： | AT-635PIN |
| 英文描述： | Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
| 中文描述： | 武審裁年齡佤族河口均衡器吸收衰減永昌，35分貝區(qū)- 2吉赫 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 177K |
| 代理商： | AT-635PIN |
V 3.00
Features
G
35 dB Voltage Variable Attenuation @ 1 GHz
G
Single Voltage Control 0 to -4 Volts
G
Low DC Power Consumption: 10 mW
G
Nanosecond Switching Speed
G
Temperature Range: -40C to +85C
G
Low Cost SOIC14 Plastic Package
G
Tape and Reel Packaging Available
1
Description
M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 14-lead surface mount plastic pack-
age. The AT-635 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u ed. Typical applications include radio, cellular, GPS equip-
ment and other Automatic Gain/Level Control circ u s
The AT-635 is fabricated with a monolithic GaAs MMIC using a
m a u e 1-micron process. The process features full chip passiva-
tion for increased perf o mance and re a b y
Vo age Va a ble Absorptive Attenu a o ,35 dB
DC - 2 GHz
AT-635
S O 1 4
Parameter
Insertion Loss
Test Conditions
2
Unit
dB
dB
dB
dB
dB
dB
dB
Min.
Typ.
6.5
6.7
7.2
7.5
+/-1.0
+/-1.2
+/-1.2
Max
6.7
7.0
7.4
7.8
+/-1.3
+/-1.5
+/-1.5
DC – 0.1 GHz
DC – 0.5 GHz
DC – 1.0 GHz
DC – 2.0 GHz
10 dB Attenuation
20 dB Attenuation
30 dB Attenuation
Flatness DC-2 GHz
(Peak to Peak)
VSWR
Trise, Tfall
Ton, Toff
Transients
Power
Handling
2.0:1
2
4
30
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
Linear Operation
Absolute Max Input Power
Measured Relative
to Input Power
(for two-tone input power up to +5 dBm)
Measured Relative
to Input Power
(for two-tone input power up to +5 dBm)
nS
nS
mV
dBm
dBm
dBm
dBm
13
21
0.05 GHz
0.5 – 2.0 GHz
34
47
IP2
0.05 GHz
0.5 – 2.0 GHz
dBm
dBm
18
18.5
31
(3)
36
(3)
IP3
Electrical Specifications,T
A
= +25°C
1.Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50
system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 μA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Ordering Information
Part Number
AT-635 PIN
AT-635TR
Package
SOIC 14-Lead Plastic Package
Forward Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-635TR | Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
| AT-64020 | Up to 4 GHz Linear Power Silicon Bipolar Transistor |
| AT-64023 | Up to 4 GHz Linear Power Silicon Bipolar Transistor |
| AT1117 | 1A Low Dropout Fast Response Positive Adjustable Regulator |
| AT1117-28V | 1A Low Dropout Fast Response Positive Adjustable Regulator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-635-PIN | 制造商: 功能描述: 制造商:MACOMM 功能描述: 制造商:undefined 功能描述: |
| AT-635-R | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述: |
| AT635RTR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| AT-635SMB | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz |
| AT-635TR | 制造商: 功能描述: 制造商:MACOMM 功能描述: 制造商:undefined 功能描述: |
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