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參數(shù)資料
| 型號(hào)： | AT-64023 |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Up to 4 GHz Linear Power Silicon Bipolar Transistor |
| 中文描述： | 高達(dá)4 GHz的線(xiàn)性電源硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | AT-64023 |
4-183
Up to 4 GHz Linear Power
SiliconBipolar Transistor
Technical Data
Features
High Output Power:
27.5 dBm Typical P
1 dB
at 2.0GHz
26.5 dBm Typical P
1 dB
at 4.0GHz
High Gain at 1 dB
Compression:
12.5 dB Typical
G
1 dB
at 2.0GHz
9.5 dB Typical
G
1 dB
at 4.0GHz
35% Total Efficiency
Emitter Ballast Resistors
Hermetic, Metal/Beryllia
Stripline Package
AT-64023
230 mil BeO Package
Description
The AT-64023 is a high perfor-
mance NPN silicon bipolar
transistor housed in a hermetic
BeO flange package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applica-
tions operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
5965-8916E
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