參數(shù)資料
型號(hào)： AT-64020
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： Up to 4 GHz Linear Power Silicon Bipolar Transistor
中文描述： 高達(dá)4 GHz的線性電源硅雙極晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 45K
代理商： AT-64020
4-179
Up to 4 GHz Linear Power
SiliconBipolar Transistor
Technical Data
Features
High Output Power:
27.5 dBm Typical P
1 dB
at 2.0GHz
26.5 dBm Typical P
1 dB
at 4.0GHz
High Gain at 1 dB
Compression:
10.0 dB Typical
G
1 dB
at 2.0GHz
6.5 dB Typical
G
1 dB
at 4.0GHz
35% Total Efficiency
Emitter Ballast Resistors
Hermetic, Metal/Beryllia
Package
AT-64020
200 mil BeO Package
Description
The AT-64020 is a high perfor-
mance NPN silicon bipolar
transistor housed in a hermetic
BeO disk package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applica-
tions operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
5965-8915E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT64023 制造商:Hewlett Packard Co 功能描述:
AT-64023 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT640283 制造商:MA/COM 功能描述:New
AT64035 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR
AT641TAT-8IN-TSCREEN
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