- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375370 > AT-42000 Up to 6 GHz Medium Power Up to 6 GHz Medium Power PDF資料下載
參數(shù)資料
| 型號： | AT-42000 |
| 英文描述： | Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| 中文描述： | 到6 GHz中等功率高達(dá)6 GHz的中等功率 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AT-42000 |
4-149
Up to 6 GHz Medium Power
Silicon Bipolar Transistor Chip
Technical Data
Features
High Output Power:
21.0 dBm Typical P
1 dB
at 2.0GHz
20.5 dBm Typical P
1 dB
at 4.0GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G
1 dB
at 2.0GHz
10.0 dB Typical G
1 dB
at 4.0GHz
Low Noise Figure:
1.9 dB
Typical NF
O
at 2.0 GHz
High Gain-Bandwidth
Product:
9.0 GHz Typical f
T
AT-42000
Chip Outline
Description
Hewlett-Packard’s AT-42000 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that
are easy to match for low noise
and medium power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
up to 1 GHz ,
makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
The recommended assembly
procedure is gold-eutectic die
attach at 400
o
C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
“Chip Use”.
5965-8909E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42000-GP4 | Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| AT-635 | Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
| AT-635PIN | Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
| AT-635TR | Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
| AT-64020 | Up to 4 GHz Linear Power Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-42000-GP4 | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42010 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | SOT-100VAR |
| AT-42010 | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。