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參數資料
| 型號： | ASICD2315 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時鐘振蕩器 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | ASICD2315 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
E
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
R
BE
= 10
60
V
4.0
V
5
mA
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
80
pF
G
PE
IMD
3
V
CE
= 25 V
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
I
CQ
= 3.2 A f = 225 MHz
13.5
14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
CD2315
DESCRIPTION:
The
ASI CD2315
is designed for
broadband amplifier applications in
commercial and amateur
communication equipment.
FEATURES:
P
G
= 18 dB min. at 75 W/30 MHz
IMD
3
= -30 dBc max. at 75 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
10 A
60 V
35 V
140 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.05 °C/W
PACKAGE STYLE .380 4L FLG
1 = Collector 2 = Emitter 3 = Base
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
2
2
1
3
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