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參數(shù)資料
| 型號： | ASIMM8006 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | ASIMM8006 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 3.0 mA
BV
CBO
I
C
= 1.0
μ
A
V
CB
= 15 V
V
CB
= 15 V
BV
EBO
I
E
= 10
μ
A
h
FE
V
CE
= 1.0 V I
C
= 1.0 mA
V
CE(SAT)
I
C
= 10 mA
V
BE(SAT)
I
C
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
10
UNITS
V
15
V
I
CBO
T
A
= 150 °C
0.01
1.0
μ
A
3.0
V
25
---
I
B
= 1.0 mA
I
B
= 1.0 mA
0.4
V
1.0
V
f
t
V
CE
= 10 V
V
CB
= 0 V
V
CB
= 10 V
V
EB
= 0.5 V
I
C
= 4.0 mA f = 100 MHz
f = 140 KHz
f = 140 KHz
1000
MHz
C
ob
3.0
1.7
pF
C
ib
f = 140 KHz
2.0
pF
N
F
G
pe
P
out
η
V
CE
= 6.0 V I
C
= 1.0 mA f = 60 MHz
V
CB
= 12 V
I
C
= 6.0 mA f = 200 MHz
6.0
dB
15
dB
V
CB
= 15 V
I
C
= 8.0 mA f = 500 MHz
30
25
mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
MM8006
DESCRIPTION:
The
ASI MM8006
is Designed for
High Frequency Low Noise Amplifier
and Oscillator Applications.
MAXIMUM RATINGS
I
C
50 mA
V
CBO
15 V
P
DISS
600 mW @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
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