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參數(shù)資料
| 型號(hào)： | ASIMRF172 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 中文描述： | 甚高頻功率MOSFET N溝道增強(qiáng)模式 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | ASIMRF172 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
DSS
I
DS
= 50 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 50 mA
g
fs
I
D
= 2.5 A
NONE
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
UNITS
V
mA
μ
A
V
mho
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
5.0
1.0
5.0
1.0
1.5
C
iss
C
oss
C
rss
V
DS
= 28 V
V
GS
= 0 V
f = 1.0 MHz
200
110
20
pF
P
G
η
D
V
DD
= 28 V
f = 150 MHz
V
SWR
= 30:1
AT ALL PHASE
ANGLES
I
DQ
= 50 mA P
out
= 80 W
10
50
dB
%
ψ
NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
MRF172
DESCRIPTION:
The
ASI MRF172
is Designed for
wideband large-signal output and
driver stages in the 2.0-200 MHz
frequency range.
FEATURES:
P
G
= 10 dB Min. at 150 MHz
30:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
9.0 A
V
DSS
65 V
V
GS
±
40 V
P
DISS
220 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.8 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10830
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
S
D
G
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| ASIMRF234 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| ASIMRF390 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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