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參數(shù)資料
| 型號： | ASIDKV6522 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | SILICON HYPERABRUPT TUNING VARACTOR DIODE |
| 中文描述： | 硅HYPERABRUPT調(diào)諧變?nèi)荻O管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 13K |
| 代理商： | ASIDKV6522 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
B
I
R
= 10
μ
A
I
R
V
R
= 6.0 V
NONE
TEST CONDITIONS
MINIMUM
8.0
TYPICAL
MAXIMUM
UNITS
V
250
nA
C
T
V
R
= 2.5 V
V
R
= 4.0 V
f = 1.0 MHz
6.2
45
7.2
55
pF
Q
V
R
= 4.0 V
t = 5.0 SEC.
f = 50 MHz
100
Tsold
+230
O
C
SILICON HYPERABRUPT TUNING VARACTOR DIODE
DKV6522
DESCRIPTION:
The
ASI DKV6522
is an Ion
Implanted Silicon Hyperabrupt Tuning
Varactor Designed for Octave Tuning
up to 500 MHz.
FEATURES INCLUDE:
C
T4
= 50 pF Nominal
Hermetic Glass Package
MAXIMUM RATINGS
I
50 mA
V
8.0 V
P
DISS
250 mW @ T
C
= 25 °C
T
J
-55 °C to +125 °C
T
STG
-55 °C to +175 °C
PACKAGE STYLE DO-7
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