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參數(shù)資料
| 型號： | ASI10530 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | ASI10530 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 5 mA
BV
CER
I
C
= 15 mA
BV
EBO
I
E
= 1 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1000 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
45
3.5
15
UNITS
V
V
V
mA
---
R
BE
= 10
5.0
120
C
ob
V
CB
= 28 V
f = 1.0 MHz
7.5
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 10 W f = 2.0 GHz
5.0
35
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI2010
DESCRIPTION:
The
ASI 2010
is Designed for General
Purpose Class C Power Amplifier
Applications up to 2300 MHz.
FEATURES:
P
G
= 5 dB min. at 10 W/ 2,000 MHz
Hermetic Microstrip Package
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
1.5 A
35 V
35 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
5.0
O
C/W
PACKAGE STYLE .250 2L FLG
ORDER CODE: ASI10530
MINIMUM
inches / mm
.740 / 18.80
.245 / 6.22
.128 / 3.25
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
.117 / 2.97
H
I
.560 / 14.22
.790 / 20.07
.570 / 14.48
.810 / 20.57
DIM
K
L
J
.225 / 5.72
.165 / 4.19
.003 / 0.08
.235 / 5.97
.185 / 4.70
.007 / 0.18
L
G
I
J K
H
F
B
E
C
D
A
N
M
P
.060 x 45°
P
N
M
.149 / 3.78
.058 / 1.47
.119 / 3.02
.187 / 4.75
.068 / 1.73
.135 / 3.43
.125 / 3.18
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