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參數(shù)資料
| 型號： | ASI2N3866 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 28K |
| 代理商： | ASI2N3866 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CER
I
C
= 5.0 mA R
BE
= 10
BV
EBO
I
C
= 100
μ
A
V
CE
= 55 V
V
CE
= 30 V V
BE
= -1.5 V T
C
= 200
O
C
I
CEO
V
CE
= 28 V
I
EBO
V
EB
= 3.5 V
V
CE
= 5.0 V I
C
= 50 mA
I
C
= 360 mA
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA
NONE
TEST CONDITIONS
MINIMUM
30
55
3.5
TYPICAL
MAXIMUM
100
500
20
100
200
UNITS
V
V
V
I
CEX
V
BE
= -1.5 V
μ
A
μ
A
μ
A
h
FE
10
5.0
---
1.0
V
f
t
V
CE
= 15 V I
C
= 50 mA
V
CB
= 28 V
f = 200 MHz
f = 1.0 MHz
500
MHz
pF
C
OB
3.0
G
PE
η
c
V
CC
= 28 V
P
out
= 1.0 W f = 400 MHz
10
45
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3866
DESCRIPTION:
The
ASI 2N3866
is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
30 V
P
DISS
5.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
35
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
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