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參數(shù)資料
| 型號(hào)： | ASI223-12 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | ASI223-12 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 15 mA
BV
CER
I
C
= 15 mA
BV
EBO
I
E
= 1.5 mA
I
CES
V
CE
= 22 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
45
3.5
30
UNITS
V
V
V
mA
---
1.5
300
P
G
η
C
V
CC
= 22 V
GHz
P
OUT
= 12 W f = 2.2 – 2.3
7.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI223-12
DESCRIPTION:
The
ASI 2223-12
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
1.5 A
V
CC
25 V
P
DISS
33.0 W @ T
C
≤
70
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +200
O
C
θ
JC
3.9
O
C/W
PACKAGE STYLE .310 2L FLG
ORDER CODE: ASI10532
MINIMUM
inches / mm
.100 / 2.54
.050 / 1.27
.286 / 7.26
.110 / 2.79
.306 / 7.77
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.318 / 8.08
.306 / 7.77
.130 / 3.30
H
I
DIM
K
L
M
J
.552 / 14.02
.790 / 20.07
.300 / 7.62
.003 / 0.08
.572 / 14.53
.810 / 20.57
.320 / 8.13
.006 / 0.15
P
N
.118 / 3.00
.131 / 3.33
.072 / 1.83
.148 / 3.76
.120 / 3.05
R
.052 / 1.32
.230 / 5.84
.095 / 2.41
.105 / 2.67
.400 / 10.16
.119 / 3.02
I
G
C
D
F
E
N
H
4x .062 x 45°
R
P
M
L
J
K
2 x B
.040 x 45°
A
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