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參數(shù)資料
| 型號(hào)： | AS9C25512M2018L |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| 中文描述： | 2.5V的512/256K × 18同步雙與3.3V或2.5V接口端口靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 9/30頁(yè) |
| 文件大?。?/td> | 1100K |
| 代理商： | AS9C25512M2018L |
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AS9C25512M2018L
AS9C25256M2018L
9/24/04, v.1.2
Alliance Semiconductor
P. 9 of 30
Package Thermal Resistance
Description
Notes:
1. This parameter is sampled.
Capacitance
[1]
(T
A
= +25 °C, F = 1.0 Mhz)
[2]
Notes:
1. Sampled, not 100% tested
2. T
A
stands for 'Ambient temperature'.
3. L = 0V; H = 3V
Absolute maximum ratings
[1]
Notes:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating for extended
periods may affect reliability.
Conditions
Symbol
Typical
Units
Thermal Resistance (junction to
ambient)
[1]
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
BGA
fpBGA
TQFP
θ
JA
θ
JA
θ
JA
TBD
TBD
TBD
°C/W
°C/W
°C/W
Thermal Resistance (junction to
top of case)
[1]
θ
JC
TBD
°C/W
Parameter
Symbol
Signals
Address and
Control pins
Flag Output pins V
OUT
= L to H or H to L
I/O pins
V
I/O
= L to H or H to L
Test Condition
[3]
BGA
(Max)
fpBGA
(Max)
TQFP
(Max)
Unit
Input Capacitance
C
IN
V
IN
= L to H or H to L
TBD
TBD
TBD
pF
Output Capacitance
I/O Capacitance
C
OUT
C
I/O
TBD
TBD
TBD
TBD
TBD
TBD
pF
pF
Rating
Parameter
Symbol
VDD
VDDQ
V
IN
P
D
I
OUT
T
STG
T
BIAS
T
JN
Min
-0.5
-0.3
-0.3
-
-
-65
-55
-
Max
3.6
3.9
Unit
V
V
V
W
mA
°C
°C
°C
Core supply voltage relative to VSS
I/O supply voltage relative to VSS
Input and I/O voltage relative to VSS
Power Dissipation
Short circuit output current
Storage Temperature
Storage Temperature under Bias
Junction Temperature
VDDQ + 0.3
TBD
TBD
150
125
TBD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS9C25512M2018L-200TI | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-250BC | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-250BI | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-250FC | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-250FI | 2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS9C25512M2018L-133BC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-133BI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-133FC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-133FI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
| AS9C25512M2018L-133TC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface |
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