參數(shù)資料
型號(hào): AS7C33512PFS32A-225TQC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 512K X 32 STANDARD SRAM, 6.9 ns, PQFP100
封裝: 14 X 20 MM, TQFP-100
文件頁數(shù): 19/21頁
文件大小: 463K
代理商: AS7C33512PFS32A-225TQC
12/2/02, v. 0.9.8 Advance Info
Alliance Semiconductor
7 of 21
AS7C33512PFS32A
AS7C33512PFS36A
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
IDD operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current1
1 FTX
LBO, and ZZX pins and the 165 BGA JTAG pins (TMSX, TDIX, and TCKX) have an internal pull-up, and input leakage = ±10 a.
|ILI|VDD = Max, OV < VIN < VDD
-2
2
A
Output leakage current
|ILO|OE VIH, VDD = Max, OV < VOUT < VDDQ
-2
2
A
Input high (logic 1) voltage
VIH
Address and control pins
2
VDD+0.3
V
I/O pins
2
VDDQ+0.3
Input low (logic 0) voltage
VIL
Address and control pins
-0.3
0.8
V
I/O pins
-0.5
0.8
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|ILI|VDD = Max, OV < VIN < VDD
-2
2
A
Output leakage current
|ILO|OE VIH, VDD = Max, OV < VOUT < VDDQ
-2
2
A
Input high (logic 1) voltage
VIH
Address and control pins
1.7
VDD+0.3
V
I/O pins
1.7
VDDQ+0.3
V
Input low (logic 0) voltage
VIL
Address and control pins
-0.3
0.7
V
I/O pins
-0.3
0.7
V
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 2.625V
0.7
V
Parameter
Sym
Conditions
-250
-225
-200
-166
Unit
Operating power supply
current1
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
ICC
CE0 = VIL, CE1 = VIH, CE2 = VIL, f = fMax,
IOUT = 0 mA
450
425
400
350
mA
Standby power supply current
ISB
Deselected, f = fMax, ZZ < VIL
160
150
130
120
mA
ISB1
Deselected, f = 0, ZZ
< 0.2V,
all VIN 0.2V or VDD – 0.2V
70
ISB2
Deselected, f = fMax, ZZ VDD – 0.2V,
all VIN VIL or VIH
60
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