參數(shù)資料
型號: AS7C33256FT18B-80TQI
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 256K x 18 Flow Through Synchronous SRAM
中文描述: 256K X 18 STANDARD SRAM, 8 ns, PQFP100
封裝: 14 X 20 MM, TQFP-100
文件頁數(shù): 8/19頁
文件大?。?/td> 401K
代理商: AS7C33256FT18B-80TQI
AS7C33256FT18B
12/10/04; v.1.4
Alliance Semiconductor
P. 8 of 19
.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Absolute maximum ratings
1
1 Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.
Parameter
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.5
–0.5
–0.5
–65
–65
Max
+4.6
Unit
V
V
V
W
mA
°
C
°
C
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature (plastic)
Temperature under bias
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
50
+150
+135
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
3.135
0
Nominal
3.3
3.3
0
Max
3.465
3.465
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
2.375
0
Nominal
3.3
2.5
0
Max
3.465
2.625
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
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