參數(shù)資料
型號： AS4SD1M16S-8A
英文描述： x16 SDRAM
中文描述： x16內(nèi)存
文件頁數(shù)： 27/51頁
文件大小： 1071K
代理商： AS4SD1M16S-8A
S DR A M
AS4SD16M16
Austin Semiconductor, Inc.
AS4SD16M16
Rev. 1.5 6/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
27
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity (plas-
tics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
, V
DD
Q Supply
Relative to V
SS
...................................................-1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
...................................................-1V to +4.6V
Operating Temperature, T
A
(IT)..................................-40°C to +85°C
Operating Temperature, T
A
(IT+)..............................-45°C to +105°C
Operating Temperature, T
(XT)..............................-55°C to +125°C
Storage Temperature (plastic)..................................-55°C to +150°C
Power Dissipation...........................................................................1W
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
1,5,6
(V
DD
, V
DD
Q = +3.3V ±0.3V)
PARAMETER
SYMBOL
Supply Voltage
V
DD
, V
DD
Q
MIN
3
MAX
3.6
UNITS
V
NOTES
Input High Voltage: Logic 1; All inputs
V
IH
2.2
V
DD
+ 0.3
V
22
Input Low Voltage: Logic 0; All inputs
V
IL
-0.3
0.8
V
22
Input Leakage Current: Any input 0V < V
IN
< V
DD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled:
0V < V
OUT
< V
DD
Q
Output Levels:
Output High Voltage (I
OUT
= -4mA)
I
I
-5
5
μA
I
OZ
-5
5
μA
V
OH
2.4
---
V
Output Low Voltage (I
OUT
= 4mA)
V
OL
---
0.4
V
I
DD
SPECIFICATIONS AND CONDITIONS
1,5,6,11,13
(V
DD
, V
DD
Q = +3.3V ±0.3V)
PARAMETER
Operating Current: Active Mode;
Burst = 2; READ or WRITE; t
RC
= t
RC
(MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS\ = HIGH; All banks active after t
RCD
met;
No accesses in progress
SYMBOL MAX (-75)
UNITS
NOTES
3, 18,
19, 32
I
DD1
140
mA
I
DD2
3
mA
32
I
DD3
45
mA
3, 12,
19, 32
I
DD4
150
mA
3, 18,
19, 32
t
RFC
= t
RFC
(MIN)
I
DD5
300
mA
t
RFC
= 7.81 μs
I
DD6
6
mA
Standard
I
DD7
4
mA
4, 35
Low Power (L)
I
DD7
3
mA
35
Operating Current: Burst Mode; Continuous Burst;
READ or WRITE: All banks active
Auto Refresh Current
CS\ = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE < 0.2V
3, 12,
18, 19,
32, 33
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