參數(shù)資料
型號： AS4C256K16E0-30JC
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 5V 256Kx16 CMOS DRAM (EDO)
中文描述： 256K X 16 EDO DRAM, 30 ns, PDSO40
封裝： 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù)： 3/24頁
文件大小： 644K
代理商： AS4C256K16E0-30JC
AS4C256K16E0
4/11/01; v.1.1
Alliance Semiconductor
3 of 24
Absolute maximum ratings
Parameter
NOTE: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
Shaded areas contain advance information.
Symbol
Min
Max
Unit
Input voltage
V
in
V
out
V
CC
T
OPR
T
STG
T
SOLDER
P
D
I
out
-1.0
+7.0
V
Output voltage
-1.0
+7.0
V
Power supply voltage
-1.0
+7.0
V
Operating temperature
0
+70
°C
Storage temperature (plastic)
Soldering temperature
×
time
-55
+150
260
×
10
°C
o
C
×
sec
–
Power dissipation
–
1
W
Short circuit output current
–
50
mA
Latch-up current
200
–
mA
Parameter
Symbol
Test conditions
0V
≤
V
in
≤
+5.5V
pins not under test = 0V
-30
-35
-50
Unit
Note
Min
Max
Min
Max
Min
Max
Input leakage
current
I
IL
-10
10
-10
10
-10
10
μ
A
Output leakage
current
I
OL
D
OUT
disabled,
0V
V
out
≤
+5.5V
RAS, UCAS, LCAS, address cycling;
t
RC
=min
-10
10
-10
10
-10
10
μ
A
Operating power
supply current
I
CC1
–
180
–
160
–
140
mA
1,2
TTL standby power
supply current
I
CC2
RAS = UCAS = LCAS = V
IH
–
2.0
–
2.0
–
2.0
mA
Average power
supply current,
RAS refresh mode
I
CC3
RAS cycling,
UCAS = LCAS = V
IH
,
t
RC
= min
–
200
–
190
–
140
mA
1
EDO page mode
average power
supply current
I
CC4
RAS=UCAS=LCAS=V
IL
,
address cycling: t
SC
= min
–
190
–
180
–
70
mA
1,2
CMOS standby
power supply
current
I
CC5
RAS=UCAS=LCAS= V
CC
- 0.2V
–
1.0
–
1.0
–
1.0
mA
CAS-before-RAS
refresh power
supply current
I
CC6
RAS, UCAS, LCAS, cycling;
t
RC
= min
–
200
–
190
–
140
mA
1
Output Voltage
V
OH
V
OL
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
RAS = UCAS = LCAS=V
IL
,
WE = OE = A0-A8 = V
CC
-0.2V,
DQ0-DQ15 = V
CC
-0.2V,
0.2V are open
2.4
–
2.4
–
2.4
–
V
–
0.4
–
0.4
–
0.4
V
Self refresh
current
I
CC7
–
2.0
–
2.0
–
2.0
mA
相關(guān)PDF資料
PDF描述
AS4C256K16E0-35 5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-35JC 5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-50 5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-50JC 5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0 5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4C256K16E0-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-35JC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-45JC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4C256K16E0-50 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E050JC 制造商:Alliance Memory Inc 功能描述:
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