參數(shù)資料
型號(hào): AS29F010-150TC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 5V 128K x 8 CMOS FLASH EEPROM
中文描述: 128K X 8 FLASH 5V PROM, 150 ns, PDSO32
封裝: 8 X 20 MM, TSOP-32
文件頁數(shù): 7/10頁
文件大?。?/td> 175K
代理商: AS29F010-150TC
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ZDYHIRUP
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ZDYHIRUP
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#
FRPPDQG
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EXV
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ZDYHIRUP
For all waveforms, A
IN[4:1]
, and D
IN[4:1]
= Address and Data for write cycles 1–4; D
IN
= Data to be programmed at address A
IN
; Com. = Command byte input
on the DQ pins during Write
[3]
; D
OUT
= Status byte, Manufacturer ID code, or array data for verfy.
t
PWH
t
RC
stable
t
ACC
t
CE
t
OE
Addresses
CE
OE
WE
Outputs
enabled
valid data out
High Z
High Z
t
OH
t
OF
t
AS
t
WPH
t
AH
t
CS
t
OES
t
WP
t
DS
t
DH
Addresses
CE
OE
WE
Outputs
data in
High-Z
High Z
Addresses
CE
OE
WE
Outputs
A
IN
[1] = 5555h
A
IN
[2] = 2AAAh
A
IN
[3] = 5555h
A
IN
[4] = A
IN
A
IN
Write[1]
Write[2]
Write[3]
Write[4]
Read
D
IN
[1] = AAh
D
IN
[2] = 55h
D
IN
[3] = Com.
D
IN
[4] = D
IN
D
OUT
相關(guān)PDF資料
PDF描述
AS29F010-120TC 5V 128K x 8 CMOS FLASH EEPROM
AS29F010-150LC 5V 128K x 8 CMOS FLASH EEPROM
AS29F010-150PC 5V 128K x 8 CMOS FLASH EEPROM
AS29F010 5V 128K x 8 CMOS FLASH EEPROM
AS29F010-120LC 5V 128K x 8 CMOS FLASH EEPROM
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