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參數(shù)資料
| 型號： | AS29F010-150TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 128K x 8 CMOS FLASH EEPROM |
| 中文描述： | 128K X 8 FLASH 5V PROM, 150 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | AS29F010-150TC |
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The AS29F010 is a high performance 1 megabit 5 volt-only Flash memory organized as 128K bytes of 8 bits each. It is divided into four
sectors of 32K bytes each. Each sector is separately erased and programmed without affecting data in the other sectors. All program, erase,
and verify operations are 5-volt only, and require no external 12V supply pin. All required features for in-system programmability are
provided.
The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and
Write Enable (WE) pins allow easy interface with the system bus.
Program, erase, and verify operations are controlled with an on-chip command register using a JEDEC standard Write State Machine
approach to enter commands. Each command requires four write cycles to be executed. Address and data are latched internally during all
write, erase, and verify operations, and an internal timer terminates each command. The chip has a typical timer period of 200 μs for all
commands but Erase, which has a typical period of 800 ms. Under nominal conditions, a sector can be completely programmed and verified
in less than 12 seconds To program, erase, and verify a sector typically takes less than 18 seconds.
Data protection is provided by a low-V
CC
lockout and by error checking in the Write State Machine. DATA polling and Toggle Bit modes are
used to show that the chip is executing a command when the AS29F010 is read during a write or erase operation. After Erase or P ogram
commands, Verify-1 andVerify-0 command modes ensure sufficient margin for reliable operation. (See command summary on page 5.)
The AS29F010 is packaged in 32-pn DIP, PLCC and TSOP packages with JEDEC standard pinouts for one megabit Flash memories.
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The array consists of 128K (131,072) bytes divided into four sectors of 32K bytes each. Addresses A15 and A16 select the four sectors:
Sector
Address range
0
00000h–07FFFh
1
08000h–0FFFFh
2
10000h–17FFFh
3
18000h–1FFFFh
The AS29F010 is shipped in the erased state with all bits set to 1. Programmed bits are set to 0. Data is programmed into the a ray one byte
at a time. All programmed bits remain set to 0 until the sector is erased and verified using the Sector Erase and Verify algorithm. Erase returns
all bytes in a 32K sector to the erased state FFh, or all bits set to 1. Each sector is erased individually with no effect on the other sectors.
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The AS29F010 is controlled by a Write State Machine (WSM) that interprets and executes commands. At power-up the WSM is reset to
normal read mode. Once a command is initiated by writing data into the DQ pins with the WE pin, the WSM enters the command mode and
keeps the chip powered up until the command is finished. After the command is terminated by the internal timer, the WSM returns to the
normal read mode.
Address pins
A0–A5
A6–A14
A15–A16
Function
CA: Column addresses 00–3Fh
RA: Row addresses 000–1FFh
SA: Sector addresses 0–3h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F010-120TC | 5V 128K x 8 CMOS FLASH EEPROM |
| AS29F010-150LC | 5V 128K x 8 CMOS FLASH EEPROM |
| AS29F010-150PC | 5V 128K x 8 CMOS FLASH EEPROM |
| AS29F010 | 5V 128K x 8 CMOS FLASH EEPROM |
| AS29F010-120LC | 5V 128K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F010-70LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AS29F010-70PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AS29F010-70TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AS29F010-90LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AS29F010-90PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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