參數(shù)資料
型號: AR629AU9
廠商: National Semiconductor Corporation
英文描述: MICROCIRCIT DATA SHEET
中文描述: MICROCIRCIT數(shù)據(jù)資料
文件頁數(shù): 4/17頁
文件大小: 63K
代理商: AR629AU9
MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: FUNCTIONAL TESTS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C<Ta<+125 C
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
IOPL
Output Leakage
Current - Pull-Up
Vo = Vss
3
-200
uA
1, 2,
3
IOPH
Output Leakage
Current - Pull-Up
Vo = Vdd, Vdd = Vdd max
20
uA
1, 2,
3
DIDD
Dynamic Supply
Current
FC = 32MHz, Vdd = Vdd max
110
mA
1, 2,
3
Vt+
Positive Going
Schmitt Trigger
Input Threshold
Vdd = Vdd max, Vdd = Vdd min
0.75
Vdd
V
1, 2,
3
Vt-
Negative Going
Schmitt Trigger
Input Threshold
Vdd = Vdd max, Vdd = Vdd min
1.0
V
1, 2,
3
VH
Schmitt
Hysteresis
Voltage
Vdd = Vdd max, Vdd = Vdd min
1.0
V
1, 2,
3
Gross Functional
Vdd = 5.0V, Vdd = 4.75V, Vdd = 5.25V
Pass
7, 8
Fmax Functional
Vdd = 5.0V, Vdd = 5.25V, Vdd = 4.75V
Pass
7, 8
AC: SUBSYSTEM READ CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
TAAS
AD Setup Time to
ASO High
Vdd = 4.75V, Vdd = 5.25V
3T-40
3T+25
nS
9, 10,
11
TBDMA
DMA Start To DMA
Start
Vdd = 5V +5%
315T
nS
9, 10,
11
TD3S
Delay from DSO
rising edge to
Tri-State
Vdd = 4.75V, Vdd = 5.25V
1T-20
1T+40
nS
9, 10,
11
TDAS
Delay from RICK
to ASO Low
Vdd = 4.75V, Vdd = 5.25V
1T
1T+40
nS
9, 10,
11
TDBAH
BSAO High Delay
from BUSA High
25
nS
9, 10,
11
TDBAK
BUSA Response
Time
Vdd = 4.75V, Vdd = 5.25V
0
130T
nS
9, 10,
11
TDBAK1
BUSA Response
Time (1 WAT)
Vdd = 5V +5%
0
126T
nS
9, 10,
11
TDBAKW
BUSA Response
Time (WAIT)
Vdd = 5V +5%
0
122T-T
WRWT
nS
9, 10,
11
TDBAL
BSAO Low Delay
from BUSR High,
BUSA Low
25
nS
9, 10,
11
4
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