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參數(shù)資料
| 型號： | AR629AU9 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | MICROCIRCIT DATA SHEET |
| 中文描述： | MICROCIRCIT數(shù)據(jù)資料 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 63K |
| 代理商： | AR629AU9 |
MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DYNAMIC TESTS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C<Ta<+125 C
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Continuity Test
Upper Diode, Lower Diode
Pass
1, 2,
3
SIDD
Known State Idd
Vdd = 5V
6
mA
1, 2,
3
SISS
Known State Iss
(Magnitude)
Vdd = 4.75V, Vdd = 5.0V, Vdd = 5.25V
1.5
mA
1, 2,
3
Cin
Input Capacitance
f = 1Mhz
1
20
pF
4
Cout
Output
Capacitance
f = 1Mhz
1
20
pF
4
Vih
High level Input
Voltage
Vdd = Vdd max, Vdd = Vdd min
2
2.0
V
1, 2,
3
Vil
Low Level Input
Voltage
Vdd = Vdd max, Vdd = Vdd min
2
0.8
V
1, 2,
3
Voh
High Level Output
Voltage
Vi = Vdd or Vss, Ioh = -20uA
Vdd-0.
1
V
1, 2,
3
Vol
Low Level Output
Voltage
Vi = Vdd or Vss, Iol = 20uA
0.1
V
1, 2,
3
Ioh
High Level Output
Current
Vi = Vdd or Vss, Voh = Vdd -0.8V,
Vdd = Vdd min
-4.0
mA
1, 2,
3
Iol
Low Level Output
Current
Vi = Vdd or Vss, Vol = 0.4,
Vdd = Vdd min
4.0
mA
1, 2,
3
Iil
Input Leakage
Current
No Pull Resistor
-10
10
uA
1, 2,
3
Iih
Input Leakage
Current
Vi = Vdd or Vss, Vdd = Vdd max
-10
10
uA
1, 2,
3
Ipu
Input Current
With Pull-up
Resistor
Vi = Vss or Vdd, Vdd = Vdd max
-200
20
uA
1, 2,
3
IOZH
Output leakage
Current High, No
Pull
Vo = Vdd, Vdd = Vdd max
3
10
uA
1, 2,
3
IOZL
Output leakage
Current Low, No
Pull
Vo = Vss, Vdd = Vdd max
3
-10
uA
1, 2,
3
3
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